Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Hole subbands in quantum wells and superlattices

Quantum Description of Interference Effect with Two Holes

Effective Well Width Analysis in Quantum Well Struct ures

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Bulk and Edge Quasihole Tunneling Amplitudes in the Laughlin State

Characterization Of Quasiholes In Two-Component Fractional Quantum Hall States And Fractional Chern Insulators In Vertical Bar C Vertical Bar=2 Flat Bands

Spatially Separated Excitons in Quantum-Dot Quantum Well Structures

Efficient band-structure calculations of strained quantum wells

Mixing of Subbands in GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Properties of Electrons and Excitons in Graded Quantum Wells of Ga1-xAlxAs in an Electric Field

Theoretical and experimental study on infrared intersubband transitions of quantum wells

Excitons in quantum-dot quantum-well nanoparticles

Interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field

INTERSUBBAND ABSORPTION IN P-Type GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS

Andreev Bound States and the Π-Junction Transition in a Superconductor/quantum-Dot/superconductor System

Spin-3/2 Physics Of Semiconductor Hole Nanowires: Valence-Band Mixing And Tunable Interplay Between Bulk-Material And Orbital Bound-State Spin Splittings