Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Mixing of Subbands in GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Optical Properties of GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Tunneling in Quantum-Wire Superlattices with Random Layer Thicknesses

Hole Perpendicular Transport in GaAs–AlGaAs Superlattices

Electronic Band-Structure Engineering of GaAs/AlxGa1−xAs Quantum Well Superlattices with Substructures

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Energy Subband Structures in Lateral-Surface Superlattices

Effect of Randomness in Layer Thickness on the Phonon Structure of Superlattices

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Electronic states in GaAs/AlAs lateral-surface superlattices

Efficient band-structure calculations of strained quantum wells

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Hole subbands in quantum wells and superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Influence of the Coupling Between the Normal and Lateral Motions on Surface States of a Semi-Infinite Superlattice with a Cap Layer

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Electronic Structures of Gaas/Alas Lateral Superlattices

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices.