Abstract:We have made a comprehensive photoluminescence (PL) study of the low lying conduction band states of (GaAs)m/(AlAs)n type-II short-period superlattices (SL) with m, n ⩽ 4, in order to determine their energy and symmetry. The symmetry is found from the shift and splitting of the levels under uniaxial stress, and from the no-phonon oscillator strengths determined by time-resolved PL. Our samples are found to be true superlattices obeying the optical selection rules predicted by the space group symmetry, which determines whether a transition is indirect or pseudo-direct. However, selection rules depending on parity with respect to reflection in the growth plane are not obeyed. The results are compared with theoretical calculations from the literature. When strain due to lattice mismatch is taken into account, the ordering of the levels is found to agree with the most recent calculations, except for the case m = n = 1. In this SL the lowest conduction band state is found to derive from the bulk X valley, rather than from the L valley as predicted. We confirm that this discrepancy can be resolved if there is an ordered interchange of a certain fraction of the Ga and Al atoms, and our data support the theoretical prediction that such an ordered intermixed SL may in fact be more stable than either the perfect SL or the random alloy.

Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices.

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Interface Layers in In0.532ga0.468as/Inp Superlattices

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

High resolution X-ray diffraction study in InAs/GaSb superlattice

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate

Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

Dislocations, Phason Defects, and Domain Walls in A One-Dimensional Quasiperiodic Superstructure of A Metallic Thin Film

Amorphous Silicon Periodic and Quasi-Periodic Superlattices

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Space group symmetry of the conduction band minimum in very short period GaAsAlAs superlattices

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy