Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

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