Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils
Zehui Zhang,Chunyu Xie,Min Hong,Jianping Shi,Shuangyuan Pan,Jingyi Hu,Qilong Wu,Wenzhi Quan,Nan Gao,Jijun Zhao,Yanfeng Zhang
DOI: https://doi.org/10.1021/acs.jpcc.3c04243
2023-01-01
Abstract:Defects are well known to obviously affect the crystal structure and the electronic property of two-dimensional transition-metal dichalcogenides (2D TMDs). Herein, we report the direct identification of defects of few layer 2H-TaSe2 on Au foils achieved by chemical vapor deposition and their interactions with charge density wave (CDW) order via scanning tunneling microscopy (STM). Four types of defects in 2H-TaSe2 are revealed by STM images and density functional theory (DFT) simulations, which are Se vacancy in the upper Se layer, Se vacancy in the bottom Se layer facing the substrate, Ta vacancy, and locally inserted 1T-TaSe2. Interestingly, the presence of defects in 2H-TaSe2 layers can mediate the amplitude reduction or vanishing of the CDW order, and abundant defects can even break up the long-range CDW phase into nanodomains. In addition, the amplitude of the CDW order is observed to increase gradually with increasing sample bias voltage in STM imaging, possibly due to the defect-induced electronic density inhomogeneity. Hereby, this work should provide valuable insights for the effects of various defect states on the CDW order in 2D metallic TMDs, thus propelling their intriguing property investigations and the related device applications.