Abstract:We have made a comprehensive photoluminescence (PL) study of the low lying conduction band states of (GaAs)m/(AlAs)n type-II short-period superlattices (SL) with m, n ⩽ 4, in order to determine their energy and symmetry. The symmetry is found from the shift and splitting of the levels under uniaxial stress, and from the no-phonon oscillator strengths determined by time-resolved PL. Our samples are found to be true superlattices obeying the optical selection rules predicted by the space group symmetry, which determines whether a transition is indirect or pseudo-direct. However, selection rules depending on parity with respect to reflection in the growth plane are not obeyed. The results are compared with theoretical calculations from the literature. When strain due to lattice mismatch is taken into account, the ordering of the levels is found to agree with the most recent calculations, except for the case m = n = 1. In this SL the lowest conduction band state is found to derive from the bulk X valley, rather than from the L valley as predicted. We confirm that this discrepancy can be resolved if there is an ordered interchange of a certain fraction of the Ga and Al atoms, and our data support the theoretical prediction that such an ordered intermixed SL may in fact be more stable than either the perfect SL or the random alloy.

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Energy-Levels of Very Short-Period (Gaas)n-(Alas)n Superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Space group symmetry of the conduction band minimum in very short period GaAsAlAs superlattices

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Optical Study of Electronic States in Gaasn

Electronic states in GaAs-AlAs short-period superlattices

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Optical Transitions In Ganas/Gaas Single Quantum Well

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

Conduction-band Minimum of (gaas)1/(alas)1 Superlattices: Relationship to X Minimum of AlAs.

Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices.