Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Weikun Ge,Janet L. Mackay,L. N. Pfeiffer,K. W. West

DOI: https://doi.org/10.1016/0022-2313(91)90028-t

IF: 3.6

1991-01-01

Journal of Luminescence

Abstract:Type II short-period (GaAs)n-(AlAs)n superlattices have an indirect band gap with the X conduction band minimum in the AlAs layer and the Г valence band maximum in the GaAs layer. The transfer rate of excited electrons from Г to X is high compared to the direct Г-Г recombination rate, so the indirect X-Г transition predominates in the photoluminescence spectra. The Г-Г photoluminescence is very weak and has not been reliably reported for n<7. This paper reports clear Г-Г photoluminescence and its decay for n=1,2,3 and 4 (GaAs)n-(AlAs)n superlattices, and compares the positrons to theory as well as to measurements on the Г-Г transition by other techniques.