Spatially-indirect Photo- and Electro-Luminescence in the 1.3 /spl Mu/m Range at Room Temperature

Ru, G.,Yan, J.,Yu, X.,Raj, M.

2004-01-01

Abstract:We have observed strong spatially-indirect photo- and electro-luminescence in type II InGaAsP/InGaAlAs MQW structures in the 1.3 /spl mu/m range at room temperature.

What problem does this paper attempt to address?

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes

P J Carrington,Q Zhuang,M Yin,A Krier

DOI: https://doi.org/10.1088/0268-1242/24/7/075001

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.
Two-Photon Excited Photoluminescence in Ingan Multi-Quantum-Wells Structures

Q Li,SJ Xu,DC Dai,CM Che

DOI: https://doi.org/10.1109/commad.2004.1577515

2004-01-01

Abstract:In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed
Room Temperature Midinfrared Electroluminescence from InSb/InAs Quantum Dot Light Emitting Diodes

P. J. Carrington,V. A. Solov'ev,Q. Zhuang,A. Krier,S. V. Ivanov

DOI: https://doi.org/10.1063/1.2976551

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb2 and As2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 μm was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.
Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Cai Chun-Feng,Wu Hui-Zhen,Si Jian-Xiao,Sun Yan,Dai Ning

DOI: https://doi.org/10.7498/aps.58.3560

2009-01-01

Abstract:Mid-Infrared photoluminescence of PbSe/PbSrSe multiple quantum wells (MQWs) grown by molecular beam epitaxy is studied. High-order satellite peaks are observed by high resolution X-ray diffraction, which indicates the quantum well structure has sharp interfaces. Temperature dependence of photoluminescence spectra shows that the MQWs make good confinement of electrons and holes. At the same measurement temperature, the photoluminescence peaks of the MQW sample show a clear blue shift compared with that of the bulk PbSe material. We find that the intensity of photoluminescence is dependent on the measurement temperature. When temperature increases from 150 K to 230 K, the PL intensity reaches its maximum at 230 K, and with further increasing the intensity decreases slowly. We can still observe strong PL intensity above room temperature, which indicates MQWs have the potential to be used in room-temperature-operating mid-infrared optoelectronic devices.
Photoluminescence of Quaternary GaInAsSb/AlGaAsSb Strained Multiple Quantum Wells

WZ SHEN,SC SHEN,WG TANG,Y ZHAO,AZ LI

DOI: https://doi.org/10.1063/1.359628

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures.
Mid-infrared electroluminescence at room temperature from InAsSb multi- quantum-well light-emitting diodes

Anthony Krier,M. Stone,Qiandong Zhuang,Po-Wei Liu,Gene Tsai,Hao-Hsiung Lin

DOI: https://doi.org/10.1063/1.2339036

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4μm. The spectral dependence on injection current at 4K was investigated and two transitions were identified, centered at 4.05 and 3.50μm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.
Photoluminescence Studies Of Modulation-Doped In0.60ga0.40as/In0.52al0.48as Strained Multiple-Quantum Wells

Wz Shen,Wg Tang,Zy Li,Sc Shen,A Dimoulas

DOI: https://doi.org/10.1016/0022-0248(95)00086-0

IF: 1.8

1995-01-01

Journal of Crystal Growth

Abstract:We report the first observation of room-temperature photoluminescence (PL) in modulated-doped In0.60Ga0.40As/In0.52Al0.48 As strained multiple quantum wells (MQWs). In addition to the two strong PL peaks related to the recombination between electrons in the first (n = 1), second (n = 2) subband and heavy holes in the first (n = 1) subband, a weak PL feature related to the recombination between n = 1 electrons and light holes is observed and assigned at lower temperatures. Based on a steady-state PL model, the temperature and laser intensity dependence of the quantum well luminescence intensity and peak energy allows us to conclude that the dominant luminescence quenching mechanism in this strained system is exciton trapping (at low temperatures) and carrier trapping (at room temperature) on the interface misfit dislocations.
Room-temperature 1.3- and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/ quantum wells

Q. Mi,X. Xiao,J.C. Sturm,L.C. Lenchyshyn,M.L.W. Thewalt

DOI: https://doi.org/10.1109/16.163554

IF: 3.1

1992-01-01

IEEE Transactions on Electron Devices

Abstract:Summary form only given. The authors report the first room-temperature electroluminescence (EL) from Si/SiGe quantum-well structures with peak emissions at 1.3 and 1.5 mu m. The peak intensities are relatively insensitive to temperature from 77 to 300 K. The LED (light emitting diode) has a p-i-n structure with an active intrinsic region which consists of ten 60-AA Si/sub 0.65/Ge/sub 0.35/ quantum wells for the 1.3- mu m device and a single 13-AA Ge layer for the 1.5- mu m device. Well-resolved low-temperature (4 K) photoluminescence (PL) shows that the 1.3- mu m luminescence is from the no-phonon band-edge exciton recombination in the Si/sub 0.65/Ge/sub 0.35/ quantum wells. The same physical mechanism is responsible for room-temperature 1.3- mu m luminescence. The internal quantum efficiency of the 1.3- mu m LED diode is estimated to have a lower limit of 2*10/sup -4/.<>

engineering, electrical & electronic,physics, applied
Photoluminescence of GaAsSb/GaInAs Bilayer Quantum Wells Grown on GaAs Substrate

Yu-hua QU,De-sheng JIANG,Li-Feng BIAN,Zheng Sun,Zhi-chuan NIU,Xiao-hua XU

DOI: https://doi.org/10.3321/j.issn:1000-7032.2005.04.018

2005-01-01

Chinese Journal of Luminescence

Abstract:Many efforts have been made to seek structures grown on GaAs substrate with long emission wavelength for telecommunication, among which GaAsSb/GaInAs bilayer quantum wells embedded into GaAs layers provide a promising structure for realizing 1 300 nm emission. It has been pointed out that the GaAsSb/GaInAs conduction band alignment is of type-Ⅱ, with electrons confined in GaInAs layer whereas holes confined in GaAsSb layer.The relative strong ground state transition has been observed in photoluminescence (PL) spectra.However, the physical aspects of the bilayer quantum well (QW) structure were still not very well studied. For example, the experimental verification of band alignment between GaInAs and GaAsSb and the overlap integral of type-Ⅱ transitions were not well provided. The behavior of excited states transitions was reported, but had never been investigated by PL spectra, which is studied in this paper. The optical transitions in GaAsSb/GaInAs/GaAs bilayer quantum wells (QWs) are studied by photo-(luminescence) (PL) and photoreflectance (PR) measurements. Two PL peaks with large energy separation (120 meV) are observed at 300 K, while at 10 K only the one at lower energy is observed. Further studies show that the PL peak with higher energy appears only at the temperatures above 150 K. The physical mechanisms of the two PL peaks have been identified to be different. The lower PL peak and the higher one belong to type-Ⅱ and type-Ⅰ-like transition, respectively. An optical transition model is formed and the wave functions overlap integrals of electrons and holes are calculated. The methods to enhance the lowest interband (optical) transitions of the QW are suggested based on the growth conditions of the studied samples.
Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Weikun Ge,Janet L. Mackay,L. N. Pfeiffer,K. W. West

DOI: https://doi.org/10.1016/0022-2313(91)90028-t

IF: 3.6

1991-01-01

Journal of Luminescence

Abstract:Type II short-period (GaAs)n-(AlAs)n superlattices have an indirect band gap with the X conduction band minimum in the AlAs layer and the Г valence band maximum in the GaAs layer. The transfer rate of excited electrons from Г to X is high compared to the direct Г-Г recombination rate, so the indirect X-Г transition predominates in the photoluminescence spectra. The Г-Г photoluminescence is very weak and has not been reliably reported for n<7. This paper reports clear Г-Г photoluminescence and its decay for n=1,2,3 and 4 (GaAs)n-(AlAs)n superlattices, and compares the positrons to theory as well as to measurements on the Г-Г transition by other techniques.
Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Shuo Cao,Xiaofan Ji,Kangsheng Qiu,Yunan Gao,Yanhui Zhao,Jing Tang,Zheng Xu,Kuijuan Jin,Xiulai Xu

DOI: https://doi.org/10.1088/0268-1242/28/12/125004

IF: 2.048

2013-01-01

Semiconductor Science and Technology

Abstract:We report a spatially resolved photoluminescence mapping of InGaAs quantum wells. The photoluminescence was collected on top of the quantum well, with a HeNe laser pumping horizontally or vertically. In the horizontal configuration, at temperature of 68 K, the spectral linewidth narrows from 2.8 to 2.2 meV with the peak shifting from 1.4425 to 1.4415 eV, while at 3.8 K these changes were not observed. This demonstrates that photo-generated carriers can diffuse away from the laser spot and relax to the lower energy states in the case when the charge carriers are thermally activated. The spectra narrowing in the vertical configuration, which could not be observed, is due to the fact that the emitted light was always collected from the same spot of the pumping laser without diffusion.
Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Shiping Luo,Ying Wang,Baolai Liang,Chunsheng Wang,Shufang Wang,Guangsheng Fu,Yuriy I. Mazur,Morgan E. Ware,Gregory J. Salamo

DOI: https://doi.org/10.1016/j.jlumin.2022.118827

IF: 3.6

2022-06-01

Journal of Luminescence

Abstract:Exciton localization has been investigated via photoluminescence (PL) measurements for a 50 nm InGaAs/InAlAs wide quantum well (QW) lattice-matched to an InP substrate. Discrete QW emission bands from both localized exciton (LE) recombination and free exciton (FE) recombination were observed, demonstrating modified state filling with increasing pump power. An "S" shaped dependence of the FE peak energy on the temperature represents a signature of exciton activation and transition from LEs into FEs. The exciton localization energy was measured to be 8.87 meV in the QW, which is much larger than the values of ∼3.39 meV found in the reference InGaAs bulk. In addition, a slightly longer lifetime was measured for LE emission than that of FEs. These results provide an in-depth assessment of carrier localization in the InGaAs/InAlAs/InP heterostructures and provide useful information for the design of optical devices.

optics
Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Huimin Jia,Lin Shen,Xiang Li,Yubin Kang,Xuan Fang,Dan Fang,Fengyuan Lin,Jilong Tang,Dengkui Wang,Xiaohui Ma,Zhipeng Wei

DOI: https://doi.org/10.1364/ome.410229

2020-01-01

Optical Materials Express

Abstract:As an essential structure of infrared semiconductor lasers, the optical properties of InGaAsSb/AlGaAsSb multiple quantum wells need to be fully investigated. In this paper, the temperature and excitation power-dependent photoluminescence (PL) spectra of the InGaAsSb/AlGaAsSb MQWs are measured. A strong free exciton emission with a photon energy of 0.631 eV was observed at room temperature. Besides the main peak, an obvious shoulder peak, located at the low photon energy position under low temperature range (T≤90 K), was confirmed to be an emission of defect related localized carriers by power-dependent PL spectra. The power-dependent PL spectra were dominated by the localized carriers emission under low excitation power (Iex≤20 mW), while the free-exciton emission dominated the PL spectra gradually when excitation power higher than 40 mW. This phenomenon is ascribed to the dissociation of localized states. Our work is of great significance for the device applications of InGaAsSb/AlGaAsSb multiple quantum wells.
Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in <formula formulatype="inline"> <tex>$\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$</tex></formula> Multiple Quantum Dot Photodetector

Brandon S. Passmore,Jiang Wu,M. O. Manasreh,Vasyl P. Kunets,P. M. Lytvyn,gregory j salamo

DOI: https://doi.org/10.1109/LED.2007.915371

IF: 4.8157

2008-01-01

IEEE Electron Device Letters

Abstract:Near-infrared photoresponse is observed in the temperature range of 77-300 K for a photodetector fabricated from undoped In0.35Ga0.65As/GaAs multiple quantum dots grown in a molecular beam epitaxy system. The detectivity is estimated to be on the order of 3.70 times 109 and 2.70 X 107 cm .radicHz/W at 77 and 300 K, respectively. The reduction of the detectivity is attributed to the increase of the...
Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Kelley Rivoire,Sonia Buckley,Yuncheng Song,Minjoo Larry Lee,Jelena Vuckovic

DOI: https://doi.org/10.48550/arXiv.1201.1258

2012-01-05

Quantum Physics

Abstract:We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Brandon Scott Passmore,Jiang Wu,Eric A. Decuir Jr.,Omar Manasreh,Peter M. Lytvyn,Vasyl P. Kunets,Greg J. Salamo

DOI: https://doi.org/10.1557/PROC-1055-GG02-02

2008-01-01

MRS Proceedings

Abstract:The interband and intersubband transitions in self-assembled InAs and In 0.3 Ga 0.7 As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an In x Ga 1−x As (0 to 0.3) graded well and In 0.3 Ga 0.7 As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 µm was observed for the InAs and In 0.3 Ga 0.7 As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.
Electrical and Optical Performances of Ingaas/Gaassb Superlattice Short-Wavelength Infrared Detectors

Chuan Jin,Jianxin Chen,Qingqing Xu,Chengzhang Yu,Li He

DOI: https://doi.org/10.1117/1.oe.56.5.057102

IF: 1.3

2017-01-01

Optical Engineering

Abstract:We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5 mu m at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5 mu m and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5 mu m at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias, and a diffusion length of 0.3 mu m was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

M de la Mare,P J Carrington,R Wheatley,Q Zhuang,R Beanland,A M Sanchez,A Krier

DOI: https://doi.org/10.1088/0022-3727/43/34/345103

2010-01-01

Abstract:We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
Observation of Visible Luminescence from Indium Nitride at Room Temperature

QX Guo,T Tanaka,M Nishio,H Ogawa,XD Pu,WZ Shen

DOI: https://doi.org/10.1063/1.1947914

IF: 4

2005-01-01

Applied Physics Letters

Abstract:InN films were grown on sapphire substrates with AlN buffer layers by reactive sputtering. C-axis-oriented crystalline InN films with a wurtzite structure were confirmed by x-ray diffraction and Raman scattering. Strong photoluminescence (PL) at 1.87 eV, together with a clear absorption edge at 1.97 eV, was observed at room temperature, which clearly demonstrates that it is not accurate in the previous assignment of an ∼0.7eV fundamental band gap for intrinsic InN simply from PL and absorption data. The possible origin of the present large band gap was discussed in terms of the effects of oxygen and the Burstein-Moss shift.
Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

梁晓甘,江德生,边历峰,潘钟,李联合,吴荣汉

DOI: https://doi.org/10.3321/j.issn:0253-4177.2002.12.009

2002-01-01

Abstract:Photoluminescence (PL) and photoreflectance (PR) spectra of GalnNAs/GaAs multiple quantum wells (MQWs) grown on GaAs substrate by MBE are measured over a range of temperature and excitation power density. The energy position of dominant PL peak shows an anomalous S-shape temperature dependence instead of Varshni relation. By the careful inspection, especially for the PL under lower excitation power density two near band-edge peaks are well identified. They are assigned to carriers localized by nitrogen-induced bound states and interband excitonic recombinations respectively. It is suggested that the temperature -induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the observed S-shape shift in GaInNAs. A quantitative model based on the thermal excitation and depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.

Spatially-indirect Photo- and Electro-Luminescence in the 1.3 /spl Mu/m Range at Room Temperature

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes

Two-Photon Excited Photoluminescence in Ingan Multi-Quantum-Wells Structures

Room Temperature Midinfrared Electroluminescence from InSb/InAs Quantum Dot Light Emitting Diodes

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Photoluminescence of Quaternary GaInAsSb/AlGaAsSb Strained Multiple Quantum Wells

Mid-infrared electroluminescence at room temperature from InAsSb multi- quantum-well light-emitting diodes

Photoluminescence Studies Of Modulation-Doped In0.60ga0.40as/In0.52al0.48as Strained Multiple-Quantum Wells

Room-temperature 1.3- and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/ quantum wells

Photoluminescence of GaAsSb/GaInAs Bilayer Quantum Wells Grown on GaAs Substrate

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in <formula formulatype="inline"> <tex>$\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$</tex></formula> Multiple Quantum Dot Photodetector

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Electrical and Optical Performances of Ingaas/Gaassb Superlattice Short-Wavelength Infrared Detectors

Photoluminescence of InAs<sub>0.926</sub>Sb<sub>0.063</sub>N<sub>0.011</sub>/InAs multi-quantum wells in the mid-infrared spectral range

Observation of Visible Luminescence from Indium Nitride at Room Temperature

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs