Abstract:The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $\Gamma$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

Non-thermal Emission from InGaAs Quantum Dots in a Microcavity: A Novel Cavity-Bottleneck Effect

Square-Lattice Photonic Crystal Microcavities for Coupling to Single Inas Quantum Dots

Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

Photoluminescence Intermittency of Ingaas/Gaas Quantum Dots Confined in A Planar Microcavity

Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Investigation of steady-state and time-dependent luminescence properties of colloidal InGaP quantum dots

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Direct Observation of Single InAs/GaAs Quantum Dot Spectrum Without Mesa or Mask

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots.

Single photon emission from ODT passivated near-surface GaAs quantum dots

Purcell-Enhanced Single-Photon Emission in the Telecom C-Band

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Quantum Dot Photoluminescence Enhancement in GaAs Nanopillar Oligomers Driven by Collective Magnetic Modes

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Low-noise GaAs quantum dots for quantum photonics