Abstract:Chip-based cavity quantum electrodynamics (QED) devices consisting of a self-assembled InAs quantum dot (QD) coupled to a high quality factor GaAs microdisk cavity are coherently probed through their optical channel using a fiber taper waveguide. We highlight one particularly important aspect of this all-fiber measurement setup, which is the accuracy to which the optical coupling level and optical losses are known relative to typical free-space excitation techniques. This allows for precise knowledge of the intracavity photon number and measurement of absolute transmitted and reflected signals. Resonant optical spectroscopy of the system under both weak and strong driving conditions are presented, which when compared with a quantum master equation model of the system allows for determination of the coherent coupling rate between QD exciton and optical cavity mode, the different levels of elastic and inelastic dephasing of the exciton state, and the position and orientation of the QD within the cavity. Pump-probe measurements are also performed in which a far off-resonant red-detuned control laser beam is introduced into the cavity. Rather than producing a measurable ac-Stark shift in the exciton line of the QD, we find that this control beam induces a saturation of the resonant system response. The broad photoluminescence spectrum resulting from the presence of the control beam in the cavity points to sub-bandgap absorption in the semiconductor, and the resulting free-carrier generation, as the likely source of system saturation.

Square-Lattice Photonic Crystal Microcavities for Coupling to Single Inas Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

Investigations of a coherently driven semiconductor optical cavity QED system

Electrically probing photonic bandgap phenomena in contacted defect nanocavities

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

The effect of In(Ga)As/GaAs quantum dots on the optical loss of photonic crystal cavities

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Highly-reduced Fine-structure Splitting in InAs/InP Quantum Dots Offering Efficient On-Demand 1.55 Μm Entangled Photon Emitter

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity

Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $μ$m entangled photon emitter

Dual-polarization light emission from InAs quantum dots in a annular photonic crystal cavity

InAs Quantum Dots for Quantum Information Processing

InAs/GaAs (211)B quantum dots with negligible FSS for the generation of entangled photons

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates