Abstract:We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare it to that of the InAs/GaAs quantum dots (QDs). We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their electronic structures differ significantly in certain aspects, especially for holes: (i) The hole levels have a much larger energy spacing in the InAs/InP dots than in the InAs/GaAs dots of corresponding size. (ii) Furthermore, in contrast with the InAs/GaAs dots, where the sizable hole p, d intrashell level splitting smashes the energy level shell structure, the InAs/InP QDs have a well defined energy level shell structure with small p, d level splitting, for holes. (iii) The fundamental exciton energies of the InAs/InP dots are calculated to be around 0.8 eV (similar to 1.55 mu m), about 200 meV lower than those of typical InAs/GaAs QDs, mainly due to the smaller lattice mismatch in the InAs/InP dots. (iv) The widths of the exciton P shell and D shell are much narrower in the InAs/InP dots than in the InAs/GaAs dots. (v) The InAs/GaAs and InAs/InP dots have a reversed light polarization anisotropy along the [100] and [1 (1) over bar0] directions.

InAs Quantum Dots for Quantum Information Processing

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Magneto-optical Properties of Self-Assembled InAs Quantum Dots for Quantum Information Processing

Single Inas Quantum Dot Coupled to Different "environments" in One Wafer for Quantum Photonics

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Photoluminescence of a single InAs quantum dot molecule under applied electric field

Vertically coupled multilayers of self-assembled InAs quantum dots

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

InAs/GaAs (211)B quantum dots with negligible FSS for the generation of entangled photons

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

InAs/InP Quantum Dot Lasers and Applications

Single-photon generation with InAs quantum dots

Quantum Light Source Devices of In(Ga)As Semiconductorself-Assembled Quantum Dots

Growth and Emission Tuning of InAs/InP Quantum Dots Superlattice

Highly Uniform and Symmetric Epitaxial InAs Quantum Dots Embedded Inside Indium Droplet Etched Nanoholes.

Single Photon Emissions from InAs/GaAs Quantum Dots Embedded in GaAs/SiO 2 Hybrid Microdisks

Ultrahigh-density Self-Assembled Quantum Dots of InGaAs and Suppression of Optical State-Filling Effect

Wavelength-tunable InAsP Quantum Dots in InP Nanowires

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer