Abstract:We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the [110] and $[1\overline{1}0]$ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the [110] $([1\overline{1}0])$ direction enhances the negative (positive) piezoelectric potential in the coupling region and lowers (raises) the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding $s$ orbitals to the two coupled $p$ orbitals in quantum dots coupled along the $[1\overline{1}0]$ direction and increases the splitting in the quantum dots coupled along the [110] direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the [110] direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the $[1\overline{1}0]$ direction.

Electroluminescence from Coupled Ingaas/Gaas Quantum Dots Embedded in Lateral P-I-N Junctions

Experimental Observation of Electronic Coupling in GaAs Lateral Quantum Dot Molecules

Photoluminescence of a single InAs quantum dot molecule under applied electric field

InAs Quantum Dots for Quantum Information Processing

Electrically Pumped Single-Photon Sources In Lateral P-I-N Junctions

A Highly Tunable Lateral Quantum Dot Realized in Ingaas/Inp by an Etching Technique

Coupled and decoupled dual quantum systems in one semiconductor nanocrystal.

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Electroluminescence from Si quantum dots/SiO2 multilayers with ultrathin oxide layers due to bipolar injection

Single photon emission from ODT passivated near-surface GaAs quantum dots

Electron Transport Study of A Lateral Ingaas Quantum Dot

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Direct Observation of Single InAs/GaAs Quantum Dot Spectrum Without Mesa or Mask

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Nonradiative Energy Transfer Between Colloidal Quantum Dot-Phosphors and Nanopillar Nitride Leds

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Optically Induced Hysteresis of Bilateral P–i–n Junctions Incorporated with InAs Quantum Dots

Manipulating Quantum-Confined Stark Shift in Electroluminescence from Quantum Dots with Side Gates