Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

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Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

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Inas Based Quantum Dots for Quantum Information Processing: from Fundamental Physics to 'plug and Play' Devices