Optically Controlled Quantum Dot Gated Transistors with High On/off Ratio

Xiaohong Yang,Xiulai Xu,Xiuping Wang,Haiqiao Ni,Qiqi Han,Zhichuan Niu,D. A. Williams
DOI: https://doi.org/10.1063/1.3323101
IF: 4
2010-01-01
Applied Physics Letters
Abstract:We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 μA to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.
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