Vertical-Geometry All-Optical Switches Based on Inas/Gaas Quantum Dots in A Cavity

C. Y. Jin,O. Kojima,T. Kita,O. Wada,M. Hopkinson,K. Akahane
DOI: https://doi.org/10.1063/1.3180704
IF: 4
2009-01-01
Applied Physics Letters
Abstract:Self-assembled InAs/GaAs quantum dots (QDs) incorporated in an asymmetric GaAs/Al(0.8)Ga(0.2)As vertical cavity have been employed as an optical nonlinear medium for reflection-type all-optical switches. Switching time down to 23 ps together with wavelength tuning range over 30 nm have been achieved in this structure. An angle-dependent behavior of the switching time has been observed, which suggests there is a coupling mechanism between the ground and excited states in QDs with different sizes.
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