The Design of Photo-injected X Junction GaAs All Optical Switch

Jang Xiao-qing,Minghua Wang
2004-01-01
Abstract:A photo-induced carriers injection effect all optical switch was designed.Through the improvement of traditional total internal reflection(TIR) X junction,good performance was obtained.The results of simulation shown that the extinction ratio of this type X junction all optical switch is more than 30 dB and the crosstalk is less than -30 dB.The virtue of switch speed was also analyzed,its speed is about 10~0~10~2 ns.
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