High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

Qi Wei,Yu Hui,Jiang Xiao-Qing,Yang Jian-Yi,Hao Yin-Lei,Zhou Qiang,Wang Ming-hua
DOI: https://doi.org/10.1088/0256-307x/26/3/034215
2009-01-01
Chinese Physics Letters
Abstract:A 2 × 2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below 10 ns. The flat response spectrum throughout the 1542–1562 nm wavelength range indicates that this device is insensitive to wavelength.
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