High-speed 8&#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Tao Chu,Lei Qiao,Weijie Tang

DOI: https://doi.org/10.1109/group4.2015.7305981

2015-01-01

Abstract:A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.

What problem does this paper attempt to address?

Non-blocking 8×8 Silicon Electro-Optic Switch

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/cleopr.2015.7375918

2015-01-01

Abstract:A re-arrangeable non-blocking 8×8 silicon electro-optic switch was demonstrated. It had extinction ratios of 18.3~25.5dB on all "Cross" status and 13.3~19dB on all "Bar" status at 1550nm.
Fast, High-radix Silicon Photonic Switches.

Tao Chu,Lei Qiao,Weijie Tang,Defeng Guo,Weike Wu

DOI: https://doi.org/10.1364/ofc.2018.th1j.4

2018-01-01

Abstract:With a limited number of built-in power monitors to detect the optimum operating points of all switch units, we demonstrated a 32 × 32 MZI-based silicon electro-optical switch operating with nanosecond speeds.
Ultrahigh speed semiconductor all-optical switching

Xu ZHAO,Ming-hua WANG

DOI: https://doi.org/10.13756/j.gtxyj.2001.01.015

2001-01-01

Abstract:The paper presents the sorts, features and applications of semiconductor all-optical switches. According to their structures, the switches can be divided into planar-type and waveguide-type. According to their operation principles, they can be divided into phase-shift-type and frequency-shift-type. The high efficiency of all-optical switching has been proved in 100 Gbit/s optical transmission experiment.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Tao Chu,Nuo Chen,Weijie Tang,Yating Wu

DOI: https://doi.org/10.1364/OFC.2023.M4J.6

2023-01-01

Abstract:Large-scale high-speed photonic switches were demonstrated on silicon-on-insulator and thin-film Lithium Niobate platforms, respectively. Ultra-low-loss spot-size-converter, grating coupler, waveguide crossing, and high-speed switch unit are developed, as well as an integrated 128 x 128 switch.
16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

Lei Qiao,Weijie Tang,T. Chu

DOI: https://doi.org/10.1364/OFC.2016.TH1C.2

2016-03-20

Abstract:A non-blocking 16×16 silicon electro-optic switch based on Benes network was demonstrated. The extinction ratios of the switch are 20.2~29.8 dB. It consists of 56 MZI switch units, whose switching time are 1 nanosecond.

Computer Science,Physics,Engineering
A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

YANG Jian,CHEN Wei-wei,WANG Wan-jun,WANG Ming-hua,YANG Jian-yi

DOI: https://doi.org/10.16136/j.joel.2013.01.005

2013-01-01

Abstract:In this paper,a 4×4 optical switch matrix based on free carrier dispersion effect is designed and fabricated on silicon-on-insulator(SOI) water by a 0.8 μm standard commercial CMOS line.It consists of four electro-optic 2×2 multimode imaging-based Mach-Zehnder interferometers.As a basic unit,the proposed switch matrix can be extended to n×n matrix switch and used in both optical space-division and optical time-division switching networks.The two paired MMIs in each Mach-Zehnder structure are used as 3 dB power splitters and combiners.Each switching element is electrically driven with an independent extermal power supply.By injecting free carriers into phase shifter with the active forward P-i-n diode,the π phase shift required for switching action is achieved.Experimental results show that the 4×4 silicon photonic switch matrix has the crosstalk level lower than-8.02 dB with a common spectral bandwidth as large as 35 nm,which is from 1 530 nm to 1 565 nm.Furthermore,when a specific square-wave signal with 10%-90% transition time of 5 ns is loaded,the switching response time is measured to be 17.4 ns for the rising edge and 21 ns for the falling edge,respectively.
16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Jianping Chen,Z. Guo,Liangjun Lu,Linjie Zhou,Lin Shen

DOI: https://doi.org/10.1109/JLT.2017.2751562

IF: 4.7

2018-01-15

Journal of Lightwave Technology

Abstract:In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach–Zehnder interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than −20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

Physics,Engineering
High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband

Jiawei Wang,Jia Xu Brian Sia,Xiang Li,Xin Guo,Wanjun Wang,Zhongliang Qiao,Callum G. Littlejohns. Chongyang Liu,Graham T. Reed,Rusli,Hong Wang

DOI: https://doi.org/10.1364/OE.499781

2023-07-06

Abstract:The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-${\mu}$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.

Optics,Applied Physics
Silicon-based digital optical switch with slot structure

Simiao Xiao,Xiang Wang,Fan Wang,Yinlei Hao,Xiaoqing Jiang,Minghua Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.837467

2009-01-01

Abstract:In this paper a silicon-based digital optical switch (DOS) with the slot structure is demonstrated. By filling electro-optic polymer in the void slot of the branches, the electro-optic effect can be applied to the DOS, and a high-speed silicon switch with digital switching property can be achieved. Analysis shows that the crosstalk is about 35dB, switching speed is less than lps, and the device length is less than 1mm. © 2009 SPIE.
32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1038/srep42306

IF: 4.6

2017-01-01

Scientific Reports

Abstract:To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.
Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch

Jiaqi Niu,Shanglin Yang,Ting Zhou,Hao Jia,Xin Fu,Zhizun Zhao,Zhen Li,Gaolu Zhang,Changhua Chen,Lin Yang

DOI: https://doi.org/10.1515/nanoph-2022-0259

IF: 7.5

2022-11-04

Nanophotonics

Abstract:Silicon-based optical switch is one of the key components for on-chip optical interconnect systems, and mode division multiplexing technology has been employed to boost optical switches' channel capacity. However, the majority of the proven multimode optical switches have a switching time in the microsecond range, which is insufficient for some applications. In this paper, we design and experimentally demonstrate a high-speed dual-mode 4 × 4 optical switch based on a mode-diversity scheme, composed of four pairs of mode multiplexers and de-multiplexers, and two optimized single-mode 4 × 4 optical switches. Fast switching is enabled based on the carrier dispersion effect. At the same time, we improve the performances of the optical switch by reducing the number of optical switch units used in the 4 × 4 Spanke–Beneš architecture. Its power consumptions are reduced by ∼17%. Its insertion losses are within 8.8 dB in the wavelength range of 1525–1565 nm in the both sates of "through" and "all-cross", while the optical signal-to-noise ratios are larger than 12.8 dB. Also, 50 Gbps data transmission experiments verify the device's data transmission functionality.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Chunlei Sun,Maoliang Wei,Bo Tang,Hui Ma,Peng Zhang,Ye Luo,Jialing Jian,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1364/ol.453786

2022-01-01

Abstract:The 2-µm wave band has attracted significant research interest due to its potential applications for next-generation high-capacity optical communication and sensing. As the key component, fast optical switches are essential for an advanced and reconfigurable optical network. Motivated by this prospect, we propose and demonstrate two typical silicon PIN diode switches at 2 µm. One is based on a coupled microring resonator (CMRR), and the other is based on a Mach-Zehnder interferometer (MZI) with a push-pull-like configuration. The measured insertion loss of the CMRR switch is <2.5 dB, and the cross talk is <-10.8 dB. The insertion loss of the MZI switch is <2 dB, and the cross talk is <-15.6 dB. The switch times of these two structures are both lower than 12.5 ns.
A 2 × 2 Nonblocking Mach-Zehnder-based Silicon Switch Matrix.

Weiwei Chen,Wanjun Wang,Weifeng Guo,Zhao Gong,Haiquan Zhou,Qiang Zhou,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/oe.20.012593

IF: 3.8

2012-01-01

Optics Express

Abstract:A 2 × 2 non-blocking switch matrix based on the Mach-Zehnder (MZ) interferometer was designed and fabricated on silicon-on-insulator (SOI) wafer through 0.8-μm standard commercial CMOS foundry. The two paired multimode-imaging (MMI) couplers in each MZ switching element were used as power splitters and combiners. Experimental results show that the switching elements are electrically driven with a switching speed of 17.4 ns and its cross-talk is lower than -16.1 dB under a common spectral bandwidth of 35 nm. The total switching power consumption varies from 4.55 mW to 22.4 mW for different switching paths.
High speed 2×2 optical switch based on the carrier injection

Wei Qi,Hui Yu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/aoe.2008.sul2

2008-01-01

Abstract:A 2 times 2 optical switch is fabricated using the carrier injection effect of GaAs/AlGaAs material. At 1.55 mum, the extinction ratio exceeds 21 dB for both TE and TM polarizations and the speed is less than 20 ns.
High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

Qi Wei,Yu Hui,Jiang Xiao-Qing,Yang Jian-Yi,Hao Yin-Lei,Zhou Qiang,Wang Ming-hua

DOI: https://doi.org/10.1088/0256-307x/26/3/034215

2009-01-01

Chinese Physics Letters

Abstract:A 2 × 2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below 10 ns. The flat response spectrum throughout the 1542–1562 nm wavelength range indicates that this device is insensitive to wavelength.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
High speed 2x2 optical switch based on the carrier injection

Wei Qi,Hui Yu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/aoe.2008.sul2

2009-01-01

Abstract:A 2x2 optical switch is fabricated using the carrier injection effect of GaAs/AlGaAs material. At 1.55 mu m, the extinction ratio exceeds 21dB for both TE and TM polarizations and the speed is less than 20ns. (C) 2008 Optical Society of America
Dynamic Analysis of Low Voltage Micro-machining Based 1×8 Optical Switch

鲍俊峰,曹钟慧,袁野,邹勇卓,吴兴坤

DOI: https://doi.org/10.3321/j.issn:1005-0086.2004.01.011

2004-01-01

Abstract:A 1×8 fiber optic switch based on precision electrical discharge machining(EDM)technigne,which allows fast switch (2 ms),low insertion loss (0.8 dB),return loss (≥-49 dB) and wide bandwidth,was reported.Each reflection cell in the switch consists of an electromagnetically actuated gold-coated silicon mirror rotating around a 100 μm diameter shaft and a miniature 5 V driven coil.The switch is scalable to 8×8 and allows the realization of high capacity cross-connects.A detailed switching dynamic analysis was conducted by utilizing FEA software ANSYS.The calculated switch time as a function of driving voltage was compared with the measurement and a reasonedly good agreement was obtained.
Research of high speed optical switch based on compound semiconductor

MingHua Wang,Wei Qi,Hui Yu,XiaoQing Jiang,JianYi Yang

DOI: https://doi.org/10.1007/s11434-009-0336-7

2009-01-01

Chinese Science Bulletin

Abstract:High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 µm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.

High-speed 8&amp;#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Non-blocking 8&#x00d7;8 Silicon Electro-Optic Switch

Fast, High-radix Silicon Photonic Switches.

Ultrahigh speed semiconductor all-optical switching

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband

Silicon-based digital optical switch with slot structure

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

A 2 × 2 Nonblocking Mach-Zehnder-based Silicon Switch Matrix.

High speed 2×2 optical switch based on the carrier injection

High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

High-speed compact silicon digital optical switch with slot structure

High speed 2x2 optical switch based on the carrier injection

Dynamic Analysis of Low Voltage Micro-machining Based 1×8 Optical Switch

Research of high speed optical switch based on compound semiconductor

High-speed 8×8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Non-blocking 8×8 Silicon Electro-Optic Switch

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators