Fast, High-radix Silicon Photonic Switches.

Tao Chu,Lei Qiao,Weijie Tang,Defeng Guo,Weike Wu

DOI: https://doi.org/10.1364/ofc.2018.th1j.4

2018-01-01

Abstract:With a limited number of built-in power monitors to detect the optimum operating points of all switch units, we demonstrated a 32 × 32 MZI-based silicon electro-optical switch operating with nanosecond speeds.

What problem does this paper attempt to address?

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Tao Chu,Nuo Chen,Weijie Tang,Yating Wu

DOI: https://doi.org/10.1364/OFC.2023.M4J.6

2023-01-01

Abstract:Large-scale high-speed photonic switches were demonstrated on silicon-on-insulator and thin-film Lithium Niobate platforms, respectively. Ultra-low-loss spot-size-converter, grating coupler, waveguide crossing, and high-speed switch unit are developed, as well as an integrated 128 x 128 switch.
32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1038/srep42306

IF: 4.6

2017-01-01

Scientific Reports

Abstract:To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.
High-speed 8&#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Tao Chu,Lei Qiao,Weijie Tang

DOI: https://doi.org/10.1109/group4.2015.7305981

2015-01-01

Abstract:A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.
Ultra-large-scale Silicon Optical Switches

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/group4.2016.7739115

2016-01-01

Abstract:32 × 32 electro-optic and 64 × 64 thermal-optic Mach-Zehnder interferometer (MZI)-based switches were demonstrated using a 180-nm CMOS process. To the best of our knowledge, both switches that were demonstrated were the largest-scale electro-optic and thermal-optical silicon switches available.
High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband

Jiawei Wang,Jia Xu Brian Sia,Xiang Li,Xin Guo,Wanjun Wang,Zhongliang Qiao,Callum G. Littlejohns. Chongyang Liu,Graham T. Reed,Rusli,Hong Wang

DOI: https://doi.org/10.1364/OE.499781

2023-07-06

Abstract:The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-${\mu}$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.

Optics,Applied Physics
High-speed Silicon-Integrated Photonic Radio Frequency Switch Based on Optical Switching.

Hengsong Yue,Haozhe Sun,Tao Chu

DOI: https://doi.org/10.1364/ol.487882

2023-01-01

Abstract:Photonic radio frequency (RF) switches are promising to replace conventional electronic RF switches in modern RF communication systems owing to their high switching speed and immunity to electromagnetic interference. However, existing photonic RF switches are generally based on fre-quency or polarization filtering. Thus, they require more light sources and filters to increase the number of switch-ing channels, consequently limiting scalability. We propose a silicon-integrated photonic RF switch based on optical switching. RF signals are first modulated into the optical domain and switched through phase control of the phase shifters in the optical switch. Switching is not related to the frequency or polarization of the optical carriers, thus reducing the number of light sources required. Experimen-tal results demonstrate 10-GHz switching of two RF signals with frequencies of 20 GHz and 30 GHz. The proposed pho-tonic RF switch can be further expanded to form a large switch matrix, possibly contributing to the development of large-scale RF communication systems. & COPY; 2023 Optica Pub-lishing Group
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.
High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Chunlei Sun,Maoliang Wei,Bo Tang,Hui Ma,Peng Zhang,Ye Luo,Jialing Jian,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1364/ol.453786

2022-01-01

Abstract:The 2-µm wave band has attracted significant research interest due to its potential applications for next-generation high-capacity optical communication and sensing. As the key component, fast optical switches are essential for an advanced and reconfigurable optical network. Motivated by this prospect, we propose and demonstrate two typical silicon PIN diode switches at 2 µm. One is based on a coupled microring resonator (CMRR), and the other is based on a Mach-Zehnder interferometer (MZI) with a push-pull-like configuration. The measured insertion loss of the CMRR switch is <2.5 dB, and the cross talk is <-10.8 dB. The insertion loss of the MZI switch is <2 dB, and the cross talk is <-15.6 dB. The switch times of these two structures are both lower than 12.5 ns.
Non-blocking 8×8 Silicon Electro-Optic Switch

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/cleopr.2015.7375918

2015-01-01

Abstract:A re-arrangeable non-blocking 8×8 silicon electro-optic switch was demonstrated. It had extinction ratios of 18.3~25.5dB on all "Cross" status and 13.3~19dB on all "Bar" status at 1550nm.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch

Jiaqi Niu,Shanglin Yang,Ting Zhou,Hao Jia,Xin Fu,Zhizun Zhao,Zhen Li,Gaolu Zhang,Changhua Chen,Lin Yang

DOI: https://doi.org/10.1515/nanoph-2022-0259

IF: 7.5

2022-11-04

Nanophotonics

Abstract:Silicon-based optical switch is one of the key components for on-chip optical interconnect systems, and mode division multiplexing technology has been employed to boost optical switches' channel capacity. However, the majority of the proven multimode optical switches have a switching time in the microsecond range, which is insufficient for some applications. In this paper, we design and experimentally demonstrate a high-speed dual-mode 4 × 4 optical switch based on a mode-diversity scheme, composed of four pairs of mode multiplexers and de-multiplexers, and two optimized single-mode 4 × 4 optical switches. Fast switching is enabled based on the carrier dispersion effect. At the same time, we improve the performances of the optical switch by reducing the number of optical switch units used in the 4 × 4 Spanke–Beneš architecture. Its power consumptions are reduced by ∼17%. Its insertion losses are within 8.8 dB in the wavelength range of 1525–1565 nm in the both sates of "through" and "all-cross", while the optical signal-to-noise ratios are larger than 12.8 dB. Also, 50 Gbps data transmission experiments verify the device's data transmission functionality.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Large-Scale Silicon Optical Switches for Optical Interconnection

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1117/12.2248412

2016-01-01

Abstract:Large-scale optical switches are greatly demanded in building optical interconnections in data centers and high performance computers (HPCs). Silicon optical switches have advantages of being compact and CMOS process compatible, which can be easily monolithically integrated. However, there are difficulties to construct large ports silicon optical switches. One of them is the non-uniformity of the switch units in large scale silicon optical switches, which arises from the fabrication error and causes confusion in finding the unit optimum operation points. In this paper, we proposed a method to detect the optimum operating point in large scale switch with limited build-in power monitors. We also propose methods for improving the unbalanced crosstalk of cross/bar states in silicon electro-optical MZI switches and insertion losses. Our recent progress in large scale silicon optical switches, including 64 × 64 thermal-optical and 32 × 32 electro-optical switches will be introduced. To the best our knowledge, both of them are the largest scale silicon optical switches in their sections, respectively. The switches were fabricated on 340-nm SOI substrates with CMOS 180- nm processes. The crosstalk of the 32 × 32 electro-optic switch was -19.2dB to -25.1 dB, while the value of the 64 × 64 thermal-optic switch was -30 dB to -48.3 dB.
16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Jianping Chen,Z. Guo,Liangjun Lu,Linjie Zhou,Lin Shen

DOI: https://doi.org/10.1109/JLT.2017.2751562

IF: 4.7

2018-01-15

Journal of Lightwave Technology

Abstract:In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach–Zehnder interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than −20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

Physics,Engineering
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Low-voltage Micromachining-Based Scalable Optical Switch

JF Bao,Y Yuan,ZH Cao,X Wu

DOI: https://doi.org/10.1117/12.483176

2002-01-01

Abstract:We report a fiber optic switch based on a novel MEMS technology allowing fast switch (<2 ms), excellent isolation (>50dB) and wide bandwidth. Each switch module consists of an electromagnetically actuated gold-coated silicon mirror rotating around a 100 mum diameter shaft and a miniature 5V driven coil. Enabling technology is precision EDM machining and laser cutting. The switch is scalable to 8 X 8 and allows the realization of high capacity cross-connects.
Silicon-based digital optical switch with slot structure

Simiao Xiao,Xiang Wang,Fan Wang,Yinlei Hao,Xiaoqing Jiang,Minghua Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.837467

2009-01-01

Abstract:In this paper a silicon-based digital optical switch (DOS) with the slot structure is demonstrated. By filling electro-optic polymer in the void slot of the branches, the electro-optic effect can be applied to the DOS, and a high-speed silicon switch with digital switching property can be achieved. Analysis shows that the crosstalk is about 35dB, switching speed is less than lps, and the device length is less than 1mm. © 2009 SPIE.
16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

Lei Qiao,Weijie Tang,T. Chu

DOI: https://doi.org/10.1364/OFC.2016.TH1C.2

2016-03-20

Abstract:A non-blocking 16×16 silicon electro-optic switch based on Benes network was demonstrated. The extinction ratios of the switch are 20.2~29.8 dB. It consists of 56 MZI switch units, whose switching time are 1 nanosecond.

Computer Science,Physics,Engineering
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
A non-silicon micro-machining based scalable fiber optic switch

Junfeng Bao,Zhonghui Cao,Ye Yuan,X. Wu

DOI: https://doi.org/10.1016/j.sna.2004.04.014

2004-01-01

Abstract:We report a low-cost non-silicon-based fiber optic switch featuring a novel design of reflection cell, which is capable of ±5V pulse operation and self-latching. The switch prototypes were measured to have a switch time of 2.6ms, return loss of −54dB and a low insertion loss. Enabling technology is precision electrical discharge machining. The dynamic process of switching was analyzed using an FEA software ANSYS for design optimization. A reasonable agreement was obtained between the measurement and calculated results. The switch is scalable to 8×8 or above and allows the realization of high capacity cross-connects.
Scalable 3D Silicon Optical Switch Based on CLOS Architecture

Yuexin Yin,Chunlei Sun,Yingzhi Ding,Xinru Xu,Mengke Yao,Lan Li,Hongtao Lin,Daming Zhang

DOI: https://doi.org/10.1109/JPHOT.2022.3195893

IF: 2.4

2022-01-01

IEEE Photonics Journal

Abstract:To achieve complex functionality with small size, weight and power, photonic integrated circuits (PIC) are expanded from two-dimensional (2D) to three-dimensional (3D). In this paper, a new design for a scalable 3D silicon optical switch is proposed. Key elements, including silicon electro-optic switches, crossings, and interlayer transitions are used to define and optimize the 3D optical switching network. The architecture is based on CLOS architecture, which can be extended to multiple layers. Silicon-based two- and three-layer switches are carefully designed and analyzed as an example based on the transfer matrix technique (TMT). In a 4×4 two-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼4.16 dB, and ∼3.69 dB for the “all-cross” and “all-bar” states, respectively. In a 4×4 three-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼5.96 dB, and ∼5.41 dB for the “all-cross” and “all-bar” states, respectively. The architecture also shows the scalability of both the port number and the layer number. The scalable 3D architecture proposed could improve the interconnect density twice and thrice in a single-layer design.

Fast, High-radix Silicon Photonic Switches.

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

High-speed 8&amp;#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Ultra-large-scale Silicon Optical Switches

High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband

High-speed Silicon-Integrated Photonic Radio Frequency Switch Based on Optical Switching.

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Non-blocking 8&#x00d7;8 Silicon Electro-Optic Switch

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

Topology-optimized silicon-based dual-mode 4 × 4 electro-optic switch

Large-Scale Silicon Optical Switches for Optical Interconnection

16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Development of Silicon Photonic Devices for Optical Interconnects

Low-voltage Micromachining-Based Scalable Optical Switch

Silicon-based digital optical switch with slot structure

16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

High-speed compact silicon digital optical switch with slot structure

A non-silicon micro-machining based scalable fiber optic switch

Scalable 3D Silicon Optical Switch Based on CLOS Architecture

High-speed 8×8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Non-blocking 8×8 Silicon Electro-Optic Switch

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators