High speed 2×2 optical switch based on the carrier injection

Wei Qi,Hui Yu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/aoe.2008.sul2

2008-01-01

Abstract:A 2 times 2 optical switch is fabricated using the carrier injection effect of GaAs/AlGaAs material. At 1.55 mum, the extinction ratio exceeds 21 dB for both TE and TM polarizations and the speed is less than 20 ns.

What problem does this paper attempt to address?

High speed 2x2 optical switch based on the carrier injection

Wei Qi,Hui Yu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/aoe.2008.sul2

2009-01-01

Abstract:A 2x2 optical switch is fabricated using the carrier injection effect of GaAs/AlGaAs material. At 1.55 mu m, the extinction ratio exceeds 21dB for both TE and TM polarizations and the speed is less than 20ns. (C) 2008 Optical Society of America
High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

Qi Wei,Yu Hui,Jiang Xiao-Qing,Yang Jian-Yi,Hao Yin-Lei,Zhou Qiang,Wang Ming-hua

DOI: https://doi.org/10.1088/0256-307x/26/3/034215

2009-01-01

Chinese Physics Letters

Abstract:A 2 × 2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below 10 ns. The flat response spectrum throughout the 1542–1562 nm wavelength range indicates that this device is insensitive to wavelength.
High Speed 2 x 2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

Qi Wei,Yu Hui,Jiang Xiao-Qing,Yang Jian-Yi,Hao Yin-Lei,Zhou Qiang,Wang Ming-Hua

2009-01-01

Chinese Physics Letters

Abstract:A 2 x 2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 mu m. The polarization sensitivity of the crosstalk is within +/-0.5 dB. The switching speed is below 10 ns. The flat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.
The Design of Photo-injected X Junction GaAs All Optical Switch

Jang Xiao-qing,Minghua Wang

2004-01-01

Abstract:A photo-induced carriers injection effect all optical switch was designed.Through the improvement of traditional total internal reflection(TIR) X junction,good performance was obtained.The results of simulation shown that the extinction ratio of this type X junction all optical switch is more than 30 dB and the crosstalk is less than -30 dB.The virtue of switch speed was also analyzed,its speed is about 10~0～10~2 ns.
Research of high speed optical switch based on compound semiconductor

MingHua Wang,Wei Qi,Hui Yu,XiaoQing Jiang,JianYi Yang

DOI: https://doi.org/10.1007/s11434-009-0336-7

2009-01-01

Chinese Science Bulletin

Abstract:High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 µm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.
2×2 GaAs Asymmetric Mach–Zehnder Interferometer Switch

H FENG,XH LI,ZY YANG,MH WANG

DOI: https://doi.org/10.1063/1.106842

IF: 4

1992-01-01

Applied Physics Letters

Abstract:We report on the first 2×2 GaAs asymmetric Mach–Zehnder interferential switch. The mechanism of this device is analyzed. Instead of using Y branches, two asymmetric X junctions have been utilized in the switch. The device is characterized by a switching voltage of 12.5 V and a crosstalk ratio of less than −22 dB at an operating wavelength of 1.15 μm. It is shown that this device could be applied to switching arrays.
Improved digital optical switching using carrier injection induced reconfigurable waveguides

ilya golub,j j he,siegfried janz,w r mckinnon,p j poole,s ng,s abdalla,b a syrett,p j barrios,a delâge

DOI: https://doi.org/10.1364/ipr.2004.ithe6

2004-01-01

Abstract:A compact 1x2 InGaAsP/InP waveguide digital optical switch with electrically reconfigurable output waveguide arms is demonstrated. The carrier injection device exhibits better than 20 dB isolation and 3 nanosecond time response.
Design Of 4 X 4 Gaas-Gaalas Carrier-Injected Total Internal Reflect Optical Switch Array

R Yin,Jy Yang,Q Zhou,Mh Wang

DOI: https://doi.org/10.1117/12.317973

1998-01-01

Abstract:A new scheme of GaAs-GaAlAs total-internal-reflect (TIR) optical switch unit based on bandfilling effect is presented in this paper. Asymmetric Y-branch, which is the essential part of switch structure, is analyzed using beam propagate method (BPM) on three different conditions: index change due to injection, width of injection region and position of injection edge. Unit with two perpendicular output ports is designed according to the numerical results to realized small sized 4x4 array which can easily couple with fibers and quickly give off heat.
1X4 Gaas Optical Switch Array with Asymmetric X-Junction

JY Yang,H Feng,WQ Zhou,Q Zhou,MH Wang

DOI: https://doi.org/10.1117/12.253185

1996-01-01

Abstract:In this paper, the asymmetric X-junction is applied in the GaAs Mach-Zehnder optical switch instead of the traditional Y-branch and a 1 X 4 switch array is designed and fabricated. The basic mechanism of the asymmetric X-junction is briefly narrated. The considerations for the device's designing and the fabrication process are also presented. The switch unit in this device operating at 1.15 micrometers has a switching voltage of 12 V and a crosstalk of less than -20 dB. The propagation loss in the waveguide of this device is about 7 dB/cm.
Carrier Injection-Based Digital Optical Switch With Reconfigurable Output Waveguide Arms

S. Abdalla,S. Ng,P. Barrios,D. Celo,A. Delage,S. El-Mougy,I. Golub,J.-J. He,S. Janz,R. McKinnon,P. Poole,S. Raymond,T. J. Smy,B. Syrett

DOI: https://doi.org/10.1109/LPT.2004.824984

IF: 2.6

2004-01-01

IEEE Photonics Technology Letters

Abstract:A compact 1 × 2 waveguide digital optical switch (DOS) with electrically reconfigurable output waveguide arms is proposed and demonstrated. Calculations show that this switch can be much shorter and consume less power than previous DOS designs. An InGaAsP-InP waveguide device based on carrier injection was designed and fabricated and exhibits a 20-dB switching contrast ratio. The device length is ...
Development of Traveling Wave BOA Optical Switches

黄旭涛,赵旭,江晓清,王明华

DOI: https://doi.org/10.3969/j.issn.1001-5868.2001.04.011

2001-01-01

Abstract:A traveling wave GaAs heterostructure BOA type optical switch is designed.The characteristic of planar microstrip structure (PMS) is analyzed with spectrum domain method.The relations between extinction ratio,half wave voltage and electrode structure are analyzed and calculated with transfer matrix theory and effective index method.The following conclusions have been made:3 dB bandwidth of 20 GHz can be obtained by using PMS.The symmetry of electrode is crucial for the extinction ratio.The technology proposed in this paper can be used to get lower extinction ratio -40 dB.
Ultrahigh speed semiconductor all-optical switching

Xu ZHAO,Ming-hua WANG

DOI: https://doi.org/10.13756/j.gtxyj.2001.01.015

2001-01-01

Abstract:The paper presents the sorts, features and applications of semiconductor all-optical switches. According to their structures, the switches can be divided into planar-type and waveguide-type. According to their operation principles, they can be divided into phase-shift-type and frequency-shift-type. The high efficiency of all-optical switching has been proved in 100 Gbit/s optical transmission experiment.
High-speed 8&#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Tao Chu,Lei Qiao,Weijie Tang

DOI: https://doi.org/10.1109/group4.2015.7305981

2015-01-01

Abstract:A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.
Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/group4.2012.6324166

2012-01-01

Abstract:We report the demonstrations of two Mach-Zehnder based 2 × 2 electro-optical switches with low crosstalk. One is with assist of variable optical attenuator and the other is based on cascaded Mach-Zehnder interferometer.
Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/GROUP4.2012.6324166

2012-01-01

Abstract:We report the demonstrations of two Mach-Zehnder based 2 x 2 electro-optical switches with low crosstalk. One is with assist of variable optical attenuator and the other is based on cascaded Mach-Zehnder interferometer. © 2012 IEEE.
High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Chunlei Sun,Maoliang Wei,Bo Tang,Hui Ma,Peng Zhang,Ye Luo,Jialing Jian,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1364/ol.453786

2022-01-01

Abstract:The 2-µm wave band has attracted significant research interest due to its potential applications for next-generation high-capacity optical communication and sensing. As the key component, fast optical switches are essential for an advanced and reconfigurable optical network. Motivated by this prospect, we propose and demonstrate two typical silicon PIN diode switches at 2 µm. One is based on a coupled microring resonator (CMRR), and the other is based on a Mach-Zehnder interferometer (MZI) with a push-pull-like configuration. The measured insertion loss of the CMRR switch is <2.5 dB, and the cross talk is <-10.8 dB. The insertion loss of the MZI switch is <2 dB, and the cross talk is <-15.6 dB. The switch times of these two structures are both lower than 12.5 ns.
Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Wei Liang,Weiwei Chen,Pengjun Wang,Shixun Dai,Bohao Zhang,Yaxun Zhou,Jun Li,Yan Li,Qiang Fu,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2020.126407

IF: 2.4

2021-01-01

Optics Communications

Abstract:In this paper, a non-volatile polarization-insensitive 1×2 silicon optical switch utilizing phase-change materials is presented. The presented device is composed of three polarization beam combiners/splitters, two directional couplers with phase change materials, and a polarization-insensitive waveguide crossing. By adjusting the phase state of phase-change material, polarization-insensitive switching behavior is realized. As an example, the proposed switch using Ge2Sb2Te5 is comprehensively optimized and analyzed based on particle swarm optimization algorithm and finite difference time domain method. The designed device can have a crosstalk of less than −15.98 dB and an insertion loss of smaller than 0.95 dB over the C-band in the case of TE polarization, while a maximum crosstalk of −13.53 dB and a maximum insertion loss of 1.37 dB can be obtained within the C-band in the case of TM polarization.
A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

YANG Jian,CHEN Wei-wei,WANG Wan-jun,WANG Ming-hua,YANG Jian-yi

DOI: https://doi.org/10.16136/j.joel.2013.01.005

2013-01-01

Abstract:In this paper,a 4×4 optical switch matrix based on free carrier dispersion effect is designed and fabricated on silicon-on-insulator(SOI) water by a 0.8 μm standard commercial CMOS line.It consists of four electro-optic 2×2 multimode imaging-based Mach-Zehnder interferometers.As a basic unit,the proposed switch matrix can be extended to n×n matrix switch and used in both optical space-division and optical time-division switching networks.The two paired MMIs in each Mach-Zehnder structure are used as 3 dB power splitters and combiners.Each switching element is electrically driven with an independent extermal power supply.By injecting free carriers into phase shifter with the active forward P-i-n diode,the π phase shift required for switching action is achieved.Experimental results show that the 4×4 silicon photonic switch matrix has the crosstalk level lower than-8.02 dB with a common spectral bandwidth as large as 35 nm,which is from 1 530 nm to 1 565 nm.Furthermore,when a specific square-wave signal with 10%-90% transition time of 5 ns is loaded,the switching response time is measured to be 17.4 ns for the rising edge and 21 ns for the falling edge,respectively.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
2×2 Electrooptical Switch in Silicon-on-insulator Waveguide

QF Yan,JZ Yu,SW Chen,ZC Fan,JS Xia,ZL Liu

DOI: https://doi.org/10.1109/edssc.2003.1283490

2003-01-01

Abstract:A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.

High speed 2×2 optical switch based on the carrier injection

High speed 2x2 optical switch based on the carrier injection

High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

High Speed 2 x 2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

The Design of Photo-injected X Junction GaAs All Optical Switch

Research of high speed optical switch based on compound semiconductor

2×2 GaAs Asymmetric Mach–Zehnder Interferometer Switch

Improved digital optical switching using carrier injection induced reconfigurable waveguides

Design Of 4 X 4 Gaas-Gaalas Carrier-Injected Total Internal Reflect Optical Switch Array

1X4 Gaas Optical Switch Array with Asymmetric X-Junction

Carrier Injection-Based Digital Optical Switch With Reconfigurable Output Waveguide Arms

Development of Traveling Wave BOA Optical Switches

Ultrahigh speed semiconductor all-optical switching

High-speed 8&amp;#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

High-speed compact silicon digital optical switch with slot structure

2×2 Electrooptical Switch in Silicon-on-insulator Waveguide

High-speed 8×8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides