Research of high speed optical switch based on compound semiconductor

MingHua Wang,Wei Qi,Hui Yu,XiaoQing Jiang,JianYi Yang
DOI: https://doi.org/10.1007/s11434-009-0336-7
2009-01-01
Chinese Science Bulletin
Abstract:High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 µm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.
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