Abstract:Silicon photonic switches are widely considered as a cost-effective solution for addressing the ever-growing data traffic in datacenter networks, as they offer unique advantages such as low power consumption, low latency, small footprint and high bandwidth. Despite extensive research efforts, crosstalk in large-scale photonic circuits still poses a threat to the signal integrity. In this paper, we present two designs of silicon Mach-Zehnder Interferometer (MZI) switches achieving ultra-low-crosstalk, driven thermally and electrically. Each switch fabric is optimized at both the device and circuit level to suppress crosstalk and reduce system complexity. Notably, for the first time to the best of our knowledge, we harness the inherent self-heating effect in a carrier-injection-based MZI switch to create a pair of phase shifters that offer arbitrary phase differences. Such a pair of phase shifters induces matched insertion loss at each arm, thus minimizing crosstalk. Experimentally, an ultra-low crosstalk ratio below -40 dB is demonstrated for both thermo-optic (T-O) and electro-optic (E-O) switches. The T-O switch exhibits an on-chip loss of less than 5 dB with a switching time of 500 microseconds, whereas the E-O switch achieves an on-chip loss as low as 8.5 dB with a switching time of under 100 ns. In addition, data transmission of a 50 Gb/s on-off keying signal is demonstrated with high fidelity on the E-O switch, showing the great potential of the proposed switch designs.

Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Influence of Doping Position on the Extinction Ratio of Mach-Zehnder-Interference Based Silicon Optical Modulators

CMOS-Compatible 1 $\times$ 3 Silicon Electrooptic Switch with Low Crosstalk

Performance Influence of FCA and Nonlinear FCD to the Mach-Zehnder-Interference Based Silicon DPSK Generation

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Ultralow-Crosstalk Silicon Electro-Optic Switch with Cascaded Phase Shifters for Loss Equivalence

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Ultra-low-crosstalk Silicon Switches Driven Thermally and Electrically

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Photothermal Switching Based on Silicon Mach–Zehnder Interferometer Integrated with Light Absorber

Effects of carriers absorption on Mach-Zehnder interferometer electroopticai modulator in silicon-on-insulator

A 2 × 2 Nonblocking Mach-Zehnder-based Silicon Switch Matrix.

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

1 x N (N=2, 8) Silicon Selector Switch for Prospective Technologies at the 2 m Waveband

Research of high speed optical switch based on compound semiconductor

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.