Effects of carriers absorption on Mach-Zehnder interferometer electroopticai modulator in silicon-on-insulator

Qingfeng Yan,Jinzhong Yu

2002-01-01

Abstract:The effects of carriers absorption on Mach-Zehnder interferometer electrooptical modulator based on silicon-on-insulator (SOI) are analyzed theoretically and some measures to improve device performance are proposed as well.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
An improved Mach-Zehnder acousto-optic modulator on a silicon-on-insulator platform

Qin Chen,Yu Hui,Ye Qiao-Bo,Wei Huan,Jiang Xiao-Qing

DOI: https://doi.org/10.7498/aps.65.014304

IF: 0.906

2016-01-01

Acta Physica Sinica

Abstract:The interdigital transducer (IDT) of the traditional Mach-Zehnder (MZ) acousto-optic modulator on a silicon-oninsulator (SOI) platform is located outside its two arms. The crest and trough of the surface acoustic wave (SAW) are used to modulate the two arms of the MZ interferometer so as to achieve a high modulation efficiency. Therefore, the distance between the two arms must be odd multiples of half acoustic wavelength. However, since the substrate is usually not uniform, the wavelength of the SAW changes as it transmits through the surface of the device. As a result, the exact distance between the two arms is difficult to choose. On the other hand, the SAW losses a portion of energy after passing through the first arm of the MZ interferometer, so the modulation of the second arm becomes much weaker. To solve these problems, we propose a new structure where its IDT is situated in the middle of the two arms of the MZ interferometer. With this scheme, the two arms of the MZ interferometer are located exactly at the crest and the trough of the SAW, while they are modulated with equal strength. In this paper, we first use the finite element method to simulate the acoustic frequency and the surface displacement of the excited SAW. Then we deduce the refractive index variations of all layers according to their acousto-optic effects. After that, we analyze the influences of different factors on the acousto-optic modulation efficiency, including the type and size of waveguide, the thickness of zinc oxide (ZnO) layer, and the area it covers, the number of electrodes, etc. These parameters are accordingly optimized to enhance the modulation efficiency. Modeling result based on COMSOL Multiphysics indicates that when the width of the strip waveguide is 6 mu m, the ZnO layer covers only the area under the IDT and has a thickness of 2.2 mu m, and the number of the electrodes is 50, the effective refractive index variation of the waveguide reaches 4.08 x 10(-4) provided that the amplitude of the driving voltage is 1 V. This value is 12% higher than that of the traditional structure.
Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.

Haifeng Zhou,Yong Zhao,Wanjun Wang,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/OE.17.007043

IF: 3.8

2009-01-01

Optics Express

Abstract:The free carrier absorption effect in silicon modulation is a detrimental behavior that can influence the crosstalk of interference-based optical switches. Based on the experimental analysis of a 2x2 p-i-n silicon switch, we give a conservative estimate of the crosstalk ability of Mach-Zehnder optical switches. Experimental result shows that, while using a 1475 mu m-long phase shifter, the loss penalty almost reaches 1.45dB/pi, which deteriorates the most ideal crosstalk to just 30dB. The possible solutions to overcome this limitation are also discussed at the cost of the other device performance. (C) 2009 Optical Society of American
Influence of Doping Position on the Extinction Ratio of Mach-Zehnder-Interference Based Silicon Optical Modulators

Zhao Yong,Wang Wanjun,Shao Haifeng,Yang Jianyi,Wang Minghua,Jiang Xiaoqing

DOI: https://doi.org/10.1088/1674-4926/33/1/014009

2012-01-01

Journal of Semiconductors

Abstract:The extinction ratio(ER) of a Mach-Zehnder-interference(MZI) based silicon optical modulator can be strongly influenced by carrier absorption.Moreover,different doping positions can induce different distributions of injected carriers,leading to different ERs.This effect has been experimentally investigated based on the devices fabricated on silicon-on-insulator(SOI) by using a 0.18μm CMOS process.Our experiments indicate that a device with a doping position of about 0.5μm away from the edge of the rib waveguide has optimal ER.
Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Zhiyong Li,Liang Zhou,Xi Xiao,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1007/s12200-012-0197-6

2012-01-01

Frontiers of Optoelectronics

Abstract:Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.
Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Yue Zhao,Ting Hu,Ping Yu,Weiwei Chen,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1016/j.ijleo.2012.06.062

IF: 3.1

2013-01-01

Optik

Abstract:Theoretical analysis predicts that the performance of a silicon optical modulator based on carrier depletion in a reverse-biased pn diode is obviously influenced by photocarriers at 1550 nm wavelength. Experimental results testify that the initial output optical power reduces by 1.2 dB, and the extinction ratio decreases from 15.8 dB to13.8 dB due to the influence of photocarriers. Finally, a simple and feasible method to alleviate this influence by shorting the electrodes of the unmodulated phase shifter is proposed.
Microwave Characteristics Analysis of Mach-Zehnder GaAs/GaAlAs Traveling-Wave Optical Modulators

ZHAO Xu,Yang Jianyi,WANG Minghua

DOI: https://doi.org/10.3969/j.issn.1005-6122.2000.z1.012

2000-01-01

Abstract:A new design of Mach-Zehnder traveling-wave interferometer modulator based on the slow-wave effect of the n+ heavily doped epitaxial layer are proposed in this paper. The influences on the microwave characteristics of the modulator structural parameters are analyzed in details by means of the method of line. By introducing jσ/ωe0 into the permittivity of semiconductor,the areas of applying MoL are extended. The different functions of the odd and even symmetric modes in coplanar microstrips are pointed out. then the influences on the microwave characteristics of the modulator structural parameters are analyzed in detail. Based on the analytical results,a structure of the traveling-wave M-Z optical modulator with 46GHz theoetical bandwidth is designed.
Analysis of the Thermo-Optic Effect in Lateral-Carrier-injection SOI Ridge Waveguide Devices

Zhao Jiate,Zhao Yong,Wang Wanjun,Hao Yinlei,Zhou Qiang,Yang Jianyi,Wang Minghua,Jiang Xiaoqing

DOI: https://doi.org/10.1088/1674-4926/31/6/064009

2010-01-01

Journal of Semiconductors

Abstract:>The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices,especially for small structure ones.For a device with a 1000μm modulation length,the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions.A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Shuojian Zhang,Yimin Xia,Jialin Cheng,Jian‐Jun He

DOI: https://doi.org/10.1117/12.2686639

2023-01-01

Abstract:Silicon-organic hybrid (SOH) modulators are promising as they have large bandwidth, high modulation efficiency and low optical loss. In this paper, we present the optical and electrical design and simulation of a high-speed travelling wave SOH modulator with multiple interplay parameters. We also implement the electro-optical co-optimization to delve into the influence of the key design parameters and propose the design guideline. The results demonstrate a modulator with 3 dB bandwidth of 72 GHz, modulation efficiency of 1.26 Vmm and optical loss less than 1 dB.
Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Qiang Zhang,Hui Yu,Hao Jin,Tian Qi,Yan Li,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/jlt.2018.2839603

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:In this paper, a model is built to investigate the linearity of silicon carrier depletion based Mach-Zehnder modulators (MZMs). By approximating the nonlinear electro-optical response of a PN junction with a fourth-order polynomial, the model quantitatively calculates the modulation linearity of three different MZM configurations that have been widely used in analog optical links, i.e., single, dual-parallel, and dual-series MZMs, and qualitatively explains their respective operation mechanisms to suppress the third-order intermodulation distortion. The optimal operation condition of each configuration is derived to enhance the first-order harmonic component and suppress the nonlinear distortion. A fair comparison is performed between the three configurations in terms of their robustness, footprint, strength of the first-order harmonic component, stability, and tolerance against variations of driving RT power and control error, and so on. The result indicates that the dual-series MZM represents a reasonable tradeoff between these performance characteristics of interests.
Chirp characteristics of silicon Mach-Zehnder modulators

Yuxin Wei,Yong Zhao,Guoyi Li,Jianyi Yang

DOI: https://doi.org/10.1109/ACP.2010.5682510

2010-01-01

Abstract:Chirp characteristics of silicon based Mach-Zehnder-interferometer (MZI) modulators with forward biased P-I-N diode and reverse biased PN diode are analyzed, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude and frequency of applied sinusoidal modulating signals.
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
Performance Influence of FCA and Nonlinear FCD to the Mach-Zehnder-Interference Based Silicon DPSK Generation

Haifeng Shao,Ting Hu,Huiye Qiu,Yong Zhao,Chao Xu,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/oe.20.023527

IF: 3.8

2012-01-01

Optics Express

Abstract:Silicon unique modulation mechanism based on free-carrier dispersion (FCD) effect determines that there is operation and performance difference from LiNbO(3) modulator when achieving various optical modulation formats. In this paper, the influence of nonlinear FCD and free carrier absorption (FCA) effect on the return-to-zero (RZ)-DPSK generation scheme is numerically analyzed. Silicon waveguide with p-n diode is adopted and the reverse bias is the key factor which should be chosen carefully. Performance analysis includes two parts: the property of the generated optical signal and the dispersion penalty which is related to chirp. The simulation results show that the output phase of the optical RZ-DPSK signal has undesirable distortion and the power has considerable loss. Furthermore, the simulation of modulator with 20 dB extinction ratio is also performed for relative analysis. The poor extinction ratio will further impact the characteristic. Even the push-pull operation is utilized, there is a residual chirp resulting from FCA and nonlinear FCD effect. This kind of chirp is characterized by the dispersion penalty.
Chirp Characteristics of Silicon Mach–Zehnder Modulator Under Small-Signal Modulation

Yuxin Wei,Yong Zhao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/JLT.2011.2111413

2011-01-01

Abstract:Chirp characteristics of Silicon Mach-Zehnder Interferometer (MZI) modulators with forward-biased p-i-n and reverse-biased p-n structures are investigated by performing small-signal simulation, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude, and the frequency of applied sinusoidal modulating signals. Chirp performance at 10 GHz modulation frequency can be obtained by utilizing p-n depletion mode structure. Finally, a way to further lower the absolute value of the chirp parameter is provided by operating the MZI in a push-pull configuration.
0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Rubab Amin,Rishi Maiti,Caitlin Carfano,Zhizhen Ma,Mohammad H. Tahersima,Yigal Lilach,Dilan Ratnayake,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.1063/1.5052635

IF: 5.6

2018-12-01

APL Photonics

Abstract:Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics, neuromorphic photonics, and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact form factors that are seamlessly integrable with silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously and monolithically integrated with Si photonics open up a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity-order index change at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electro-optic modulator based on a Mach Zehnder interferometer featuring a high-performance half-wave voltage and active device length product of VπL = 0.52 V mm. We show that the unity-strong index change enables a 30 μm-short π-phase shifter operating ITO in the index-dominated region away from the epsilon-near-zero point for reduced losses. This device experimentally confirms electrical phase shifting in ITO enabling its use in applications such as compact phase shifters, nonlinear activation functions in photonic neural networks, and phased array applications for LiDAR.

optics,physics, applied
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Biao Qi,Ping Yu.,Yubo Li,Xiaoqing Jiang,Mei Yang,Jianyi Yang

DOI: https://doi.org/10.1109/LPT.2011.2148704

2011-01-01

Abstract:A new nanocavity-based electrooptic modulator on silicon-on-insulator is proposed. This nanocavity is formed by a one-dimensional photonic crystal nanobeam cavity with a slot embedded. The slot lies in both the cavity and the distributed Bragg reflectors region. This results in an ultrasmall modal volume of 0.047 (λ/n)3 and a high Q-factor of 8.6×104. Another advantage of the structure is that polymers can be infiltrated into the slot. Accordingly, we rely on the fast and strong electrooptic effect of polymers, rather than on the free-carrier plasma dispersion effect of silicon. Analysis shows a modulator with a bandwidth of 86 GHz, a switching voltage of 0.2 V, and a length of only 14 μm can be obtained.
Study on performances of silicon Mach-Zehnder electro-optic modulator based on MOS capacitor electrodes

Jichao Yang,Muping Song

DOI: https://doi.org/10.3788/CJL201037s1.0141

2010-01-01

Abstract:Silicon photonics is a novel technique for high scale optic/electronic integration, with which most kinds of optical devices can be designed. Based on free carrier plasma dispersion, silicon Mach-Zehnder electro-optic modulator (MZM) can achieve high modulation speed over 10 GHz. For silicon MZM, one of the critical techniques is how to effectively change the free carrier concentration in order to obtain the needed modification of the optical refractive index. Considering the need for modulation speed and power consumption, a kind of silicon MZM based on metal-oxide-semiconductor(MOS) capacitor electrodes is studied by a simulation method combining electric and optic analytic mode. The results show that under the driving voltage of -1.5 V, when the doping concentration is 10 15 cm -3, the effective refractive index change of the optical waveguide in silicon MZM is about 3.82 × 10 -6, which result in the V π length of 13.5 cm and the loss of less than 0.04 dB/cm. When doping concentration is 10 18 cm -3, the effective refractive index change can reach 6.96 × 10 -5, which result in the V π length of 0.7 cm and the loss of about 24.8 dB/cm. Varied capacitor electrode structures of silicon MZM may make the visible difference of the modulation performance, and its effective refractive index change may reach 1.53 × 10 -5, which result in the V π length of 3.3 cm and the loss of about 0.09 dB/cm.
Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Zhuo Cheng,Bigeng Chen,Chunlei Sun,Maoliang Wei,Shaoliang Yu,Lan Li,Hongtao Lin,Yunjiang Rao

DOI: https://doi.org/10.1109/acp55869.2022.10089079

2022-01-01

Abstract:A 5 th -order coupled microring electro-optical modulator with PIN structures is proposed and experimentally demonstrated on SOI integrated photonics platform. Ultra-high dynamic extinction ratio (ER) up to 60 dB is achieved benefiting from the high-order optical band-pass filter design. The device size on chip is only 400×220 μm 2 including electrodes and the driving voltage is 2.1 V corresponding to 0.23 W power consumption. Such integrated modulators would be promising in building compact and low-power distributed optical fiber sensing systems using low-background-noise optical pulses.

Effects of carriers absorption on Mach-Zehnder interferometer electroopticai modulator in silicon-on-insulator

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

An improved Mach-Zehnder acousto-optic modulator on a silicon-on-insulator platform

Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.

Influence of Doping Position on the Extinction Ratio of Mach-Zehnder-Interference Based Silicon Optical Modulators

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Microwave Characteristics Analysis of Mach-Zehnder GaAs/GaAlAs Traveling-Wave Optical Modulators

Analysis of the Thermo-Optic Effect in Lateral-Carrier-injection SOI Ridge Waveguide Devices

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Chirp characteristics of silicon Mach-Zehnder modulators

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Performance Influence of FCA and Nonlinear FCD to the Mach-Zehnder-Interference Based Silicon DPSK Generation

Chirp Characteristics of Silicon Mach–Zehnder Modulator Under Small-Signal Modulation

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Highly Efficient Silicon Michelson Interferometer Modulators

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Study on performances of silicon Mach-Zehnder electro-optic modulator based on MOS capacitor electrodes

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform