Abstract:To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.

A 2 × 2 Nonblocking Mach-Zehnder-based Silicon Switch Matrix.

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

2×2 GaAs Asymmetric Mach–Zehnder Interferometer Switch

Mach–Zehnder-Based Four-Port Switching Module on SOI

Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

&Lt;title>design and Fabrication of MMI-MZI Optical Switch in GaAs/GaAIAs</title>

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Design and fabrication of MMI-MZI optical switch in GaAs/GaAlAs

2×2 Electrooptical Switch in Silicon-on-insulator Waveguide

A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix

1 x N (N=2, 8) Silicon Selector Switch for Prospective Technologies at the 2 m Waveband

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

2/spl times/2 electrooptical switch in silicon-on-insulator waveguide

Improved Mach-Zehnder Interferometer With Micro-Ring-Resonator-Based Two-Beam Interferometer

CMOS-Compatible 1 $\times$ 3 Silicon Electrooptic Switch with Low Crosstalk

16×16 Non-blocking silicon electro-optic switch based on Mach-Zehnder interferometers

High-speed 8&#x00d7;8 Electro-Optic Switch Matrix Based on Silicon PIN Structure Waveguides

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.