Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

Ultrafast, Energy-Efficient Photonic Switches Based on Semiconductor Nanostructures

Photonic Switching Devices Based on Semiconductor Nano-Structures

Ultrahigh speed semiconductor all-optical switching

Quantum-confined Stark Effect and Its Application in Optical Switches

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Ultrafast Chip-Integrated All-Optical Switch in Photonic Circuits

Picosecond and Low-Power All-Optical Switching Based on an Organic Photonic-Bandgap Microcavity

Ultrafast On‐chip Remotely‐Triggered All‐Optical Switching Based on Epsilon‐Near‐Zero Nanocomposites (laser Photonics Rev. 11(5)/2017)

Optical Switches: On-Chip Optical Switch Based on Plasmon–Photon Hybrid Nanostructure-Coated Multicomponent Nanocomposite (advanced Optical Materials 8/2016)

Ultrafast Photonic Crystal Optical Switching

Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity

Low-Power All-Optical Switching in Near-Resonant Enhanced Nonlinear Photonic Crystals

All-optical Switch Based on Novel Physics Effects

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Microstructured All-Optical Switching Based on Two-Dimensional Material

Broadband and ultrafast all-optical switching based on transition metal carbide

Vertical-Geometry All-Optical Switches Based on Inas/Gaas Quantum Dots in A Cavity

Fast, High-radix Silicon Photonic Switches.

Design of an ultra-compact, energy-efficient non-volatile photonic switch based on phase change materials

Femtosecond switching of strong light-matter interactions in microcavities with two-dimensional semiconductors

Si-CMOS compatible epsilon-near-zero metamaterial for two-color ultrafast all-optical switching