Abstract:Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments.

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Quantum dots with split enhancement gate tunnel barrier control

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Ambipolar quantum dots in intrinsic silicon

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Few-electrode design for silicon MOS quantum dots

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Gate reflectometry in dense quantum dot arrays

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Remote capacitive sensing in two-dimension quantum-dot arrays

A gate-defined silicon quantum dot molecule

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Undoped accumulation-mode Si/SiGe quantum dots

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator