Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

InAs Quantum Dots for Quantum Information Processing

Self-Assembled InAs Quantum Dots on Patterned InP Substrates

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Ingaas/Gaas Three-Dimensionally-Ordered Array of Quantum Dots

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Directed Self-Assembly of InAs Quantum Dots Using in Situ Interference Lithography

Precise Arrays of Epitaxial Quantum Dots Nucleated by in Situ Laser Interference for Quantum Information Technology Applications

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Shaping InAs Quantum Dot Photoluminescence Using GaAs Nanoresonator Arrays

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Optical Studies of InAs Quantum Dots in III-V Semiconductors

QUANTUM DOT OPTO-ELECTRONIC DEVICES

A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs