Abstract:Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

quantum well structures grown by molecular beam epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Directed Self-Assembly of InAs Quantum Dots Using in Situ Interference Lithography

Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates