Abstract:The growth kinetics of vertical III-V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidewalls to the top sustains a superlinear growth regime. In this work, we report on the growth of different GaAs nanostructures by selective area MOVPE on GaAs (111)B substrates. We show that the opening dimensions and geometry qualitatively alter the morphology and height evolution of the structures. We compare the time evolution of vertical GaAs NWs stemming from circular holes and horizontal GaAs nanomembranes (NMs) growing from one-dimensional (1D) rectangular slits on the same substrate. While NW heights grow exponentially with time, NMs surprisingly exhibit sublinear kinetics. The absence of visible atomic steps on the top facets of both NWs and NMs suggests layer-by-layer growth in the mononuclear mode. We interpret these observations within a self-consistent growth model, which links the diffusion flux of Ga adatoms to the position- and shape-dependent nucleation rate on top of NWs and NMs. Specifically, the island nucleation rate is lower on top of the NMs than that on the NWs, resulting in the total diffusion flux being directed from the top facet to the sidewalls. This gives a sublinear height evolution for the NMs. These results open innovative perspectives for shape engineering of III-V nanostructures and new avenues for the design of optoelectronics and photonic devices.

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Lithography-Free Nanoscale Patterned Growth of Gaas on Si(001) with Sub-100-Nm Silica Nanoparticles by Molecular Beam Epitaxy

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit

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Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices

Growth and characterization of compound semiconductor nanowires on Si

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Selective epitaxial growth of GaAs on Ge by MOCVD

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers