Abstract:The spectroscopy of photoconductivity (PC) and photoluminescence (PL) were used to characterize two heterostructure configurations of InAlAs/InP grown by molecular beam epitaxy (MBE) on the InP (100) substrate. The sample A is the type called normal heterostructure with the In 0.52 Al 0.48 As layer grown on InP whereas the sample B is called the inverse type formed by a InP cap layer on the In 0.52 Al 0.48 As layer. The front excitation was employed in both PC and PL experiments and the measurements were conducted at 77 K. The PC spectrum of sample A shows an abnormal step-like drop when the photon energy is larger than the energy band gap of In 0.52 Al 0.48 As. The phenomenon imply that the conductance of sample is a multilayer effect including the contribution of interfacial two dimensional electron gas (2DEG). Moreover, a conductance peak was observed at 916 nm below the bandgap of InP. Accordingly, an intense luminescent peak at the wavelength manifests in the PL spectrum. The origin of the 916 nm peak is attributed to the recombination of 2DEG electrons with the valence band holes being excited near the interface. However, the spectral feature of the above energy is absent in both PC and PL spectra of sample B. Such a difference may be interpreted with the different interfacial electronic structure of the inverse interface. For the latter case, the band bending effect should be weaker regarding that a graded variation of In-As-P composition is generally associated with an inverse interface of InP/InAlAs. In such a case, the bound energy of 2DEG in the interface potential well rises closer to the conductance band of the bulk. Consequently, the recombination energy of 2DEG at the inverse interface with the holes in the valence band is close to the band-to-band transition of InP bulk and the corresponding luminescence is hard to be distinguished from that of bulk InP. The work also demonstrates that the comparative study with both PC and PL techniques is helpful to provide full insight into the spectral features with the interface electronic property.

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy

The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Localized Exciton Dynamics in AlInGaN Alloy

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Spatially-indirect Photo- and Electro-Luminescence in the 1.3 /spl Mu/m Range at Room Temperature

Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique

The different spectral features near the energy bandgaps of normal and inverse heterostructures of In 0.52 Al 0.48 As/InP

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

Interpretation of Anomalous Temperature Dependence of Anti-Stokes Photoluminescence at GaInP2/GaAs Interface

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Transition of Radiative Recombination Channels from Delocalized States to Localized States in A Gainp Alloy with Partial Atomic Ordering: A Direct Optical Signature of Mott Transition?

Carrier localization in codoped ZnO:N:Al films

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Investigation of Cavity Mode and Excitonic Transition in an InGaAs/GaAs/AlGaAs Vertical-Cavity Surface Emitting Laser Structure by Variable-Temperature Micro-Photoluminescence, Reflectance and Photomodulated Reflectance

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD