Abstract:The photoluminescence experiment was performed at 77 K on two types of heterostructures of In0.52Al0.48As/InP grown by molecular beam epitaxy. One type has the so-called direct interface formed with In0.52Al0.48As grown on the InP (100) substrate, and another is a double heterostructure type, i.e., InP/In0.52Al0.48As/InP, including the inverse interface formed with the InP cap. The thickness of both the as-grown InAlAs and InP layers is 2 μm. Under the excitation of 852 nm semiconductor laser, a single peak at 1.198 eV (P0) was observed for the direct interface whereas the inverse interface showed two peaks at 1.240 eV (P1) and 1.117 eV (P2). However, P2 manifests differently from P1 with two interesting features. First, it disappears when the excitation was replaced with the 532 nm laser. Second, when the cap layer of InP/In0.52Al0.48As/InP is thinned to 200 nm, P2 displays a large blueshift effect with the increase in laser intensity, but the extent of blueshift drops when the excitation is increased further into a higher power range. The phenomenon of P2 was attributed to the interface excitation-induced interplay between the luminescence with a carrier localization effect and that caused by the recombination of 2-dimensional electrons with the light-injected holes in the potential well at the interface.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
This paper aims to study the interface photoluminescence characteristics in In\(_{0.52}\)Al\(_{0.48}\)As/InP heterostructures, especially to distinguish the photoluminescence features of the direct interface and the inverse interface through selective excitation. Specifically, the authors carried out photoluminescence experiments on two types of In\(_{0.52}\)Al\(_{0.48}\)As/InP heterostructures at 77 K to explore the photoluminescence mechanisms of different interfaces. One type is the direct interface, that is, In\(_{0.52}\)Al\(_{0.48}\)As grown on an InP(100) substrate; the other type is a double - heterostructure, namely InP/In\(_{0.52}\)Al\(_{0.48}\)As/InP, which contains an inverse interface.
The main research contents include:
1. **Experimental design**: An 852 - nm semiconductor laser (with an energy of 1.455 eV), whose energy is between the band gaps of the two materials, was used to avoid the interface excitation prohibition caused by the adsorption on the top layer of the direct heterostructure. At the same time, since the penetration length of the 852 - nm laser in InP is about 0.9 μm, the authors carried out photoluminescence (PL) characterization of the cap layers with two different thicknesses (2 μm and 0.2 μm) for the InP/In\(_{0.52}\)Al\(_{0.48}\)As/InP double - heterostructure to distinguish the direct excitation interface from the luminescence mechanism caused by the recombination of diffusive carriers at the interface.
2. **Experimental results**: For the direct interface, a single peak (P0) located at 1.198 eV was observed. For the inverse interface, two peaks were observed, located at 1.240 eV (P1) and 1.117 eV (P2) respectively. Among them, the P2 peak shows two interesting features:
- When the excitation light source was changed from an 852 - nm laser to a 532 - nm laser, the P2 peak disappeared.
- When the cap layer thickness of the InP/In\(_{0.52}\)Al\(_{0.48}\)As/InP double - heterostructure was reduced to 200 nm, the P2 peak showed a significant blue - shift effect in the low - excitation - intensity range, but as the excitation intensity further increased, the blue - shift effect weakened.
3. **Mechanism explanation**: The phenomena of the P2 peak were attributed to the interaction of two mechanisms caused by interface excitation:
- At low excitation intensity, the P2 peak was mainly dominated by the recombination of local excitons.
- At high excitation intensity, the P2 peak was mainly dominated by the recombination of interface electrons and holes injected into the interface potential well.
Through these studies, the authors revealed the complex mechanisms of interface photoluminescence in In\(_{0.52}\)Al\(_{0.48}\)As/InP heterostructures, especially the luminescence characteristics of the inverse interface and their changes with excitation conditions. This provides an important experimental basis for understanding the interface properties of III - V semiconductor heterostructures.