Abstract:We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of similar to 40nm and a density of 3-4 x 10(9)cm(-2). The QDs superlattice has photoluminescence (PL) emission centred at 0.77eV with a linewidth of 64meV at low temperature (4K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under Pt pressure before growing the spacer layer of InP. An average P composition of similar to 30% in the resulting InAsP QDs in samples: annealed for 50s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 mum and at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths. (C) 2001 Elsevier Science B.V. All rights reserved.

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