Abstract:The ternary alloy InAsSb of the low Sb component as the buffer layer, which reduces the mismatch of the film, was grown on the GaSb (100) substrate by using the molecular beam epitaxy, and then regrown the InAs film. Real-time in situ monitoring by reflection high energy electron diffraction throughout the growth process. Following the growth of the InAs film, the electron diffraction pattern showed a clear reconstitution line, with the surface of the film having atomic flatness. Atomic Force Microscopy is used to characterize InAs films, and the results show that the roughness of epitaxial InAs film on the InAsSb buffer with lower Sb components is reduced by about 2.5 times than the roughness of epitaxial InAs film on the InAsSb buffer with higher Sb components. X-ray diffraction and simulation were performed for epitaxial InAs films on ternary alloy InAsSb buffer with different Sb composition. The results show that the full width half maximun of the diffraction peak of the epitaxial InAs film on the lower Sb composition of InAsSb buffer layer is smaller. It is indicated that the InAsSb with a low Sb component acting as a buffer layer can reduce the internal stress of the InAs film and can improve the crystal quality of the InAs film. The luminescence properties of InAs films with high crystal quality were studied by photoluminescence spectroscopy. The luminescence peak of InAs is about 0.418 eV at 10 K, which is free exciton luminescence.

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Structural and Optical Characterization of Inas Nanostructures Grown on (001) and High Index Inp Substrates

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Interface and Optical Properties of InGaAsNSb∕GaAs Quantum Wells on GaAs (411) Substrates by Molecular Beam Epitaxy

Photoluminescence Studies of Single Submonolayer Inas Structures Grown on Gaas (001) Matrix

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Photoluminescence Study of InAlAs Quantum Dots Grown on Differently Oriented Surfaces

The Investigation of Growth Characteristics of Single Quantum Wells Grown on (311) GaAs Substrates

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

InGaAs/InAlAs Quantum Well Structures Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction

Photoluminescence Study of Low Density InAs Quantum Clusters Grown by Molecular Beam Epitaxy.

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate