Abstract:Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height. (C) 2000 American Institute of Physics. [S0021-8979(00)04018-4].

Photoluminescence Studies of Single Submonolayer Inas Structures Grown on Gaas (001) Matrix

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Two-dimensional Excitonic Emission in InAs Submonolayers.

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Structural and Optical Characterization of Inas Nanostructures Grown on (001) and High Index Inp Substrates

Photoluminescence Study of Low Density InAs Quantum Clusters Grown by Molecular Beam Epitaxy.

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Time-resolved Photoluminescence of Sub-Monolayer InGaAs/GaAs Quantum-Dot-quantum-well Heterostructures

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

Enhanced Optical Properties of the Gaasn/Gaas Quantum-Well Structure by the Insertion of Inas Monolayers

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Photoluminescence Study of InAlAs Quantum Dots Grown on Differently Oriented Surfaces