Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Zhendong L��,Zhongying Xu,BaoZhen Zheng,Jizong Xu,Yuqi Wang,Jiannong Wang,WeiKun Ge

1997-01-01

Abstract:Photoluminescence associated with wetting layer can unambiguously be observed in InAs quantum dot structures when the sample was excited below the band gap of GaAs barrier. The study shows that the luminescence originates from localized exciton states in wetting layer with localization energy of 12meV and it exhibits two dimensional optical properties. Under the same growth conditions, the peak energy of the luminescence is irrelevant to InAs thickness. These results are helpful to further study of the morphology and optical properties of wetting layer.