Abstract:Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and studied via temperature-dependent and time-resolved photoluminescence (PL) spectroscopy measurements. A thin InGaAs stain reducing layer (SRL) is adopted which extends the emission wavelength to 1.3 μm and the influence of strain on QDs is investigated. The SRL releases the strain between the wetting layer and QDs, and enlarges the size of QDs, as shown by atomic force microscopy measurements. As the thickness of InAs layer decreases to 1.7 ML, the QDs with the SRL are chained to strings and the density of QDs increases significantly, which leads to an abnormal redshift of 1.3 μm PL peak at room temperature. PL peaks of InAs QDs with the SRL show redshift compared with the QDs directly deposited on GaAs matrix. The dependences of PL lifetime on the QD size, density and temperature (T) are systematically studied. It is observed that the PL lifetime of QDs is insensitive to T below 50 K. Beyond 50 K, increases and then drops at higher temperature, with a peak at TC, which was determined by the SRL and the thickness of InAs. We have also observed an obvious PL spectral redshift of the QDs with 1.7 ML InAs coverage on SRL at low T as the measuring time delays. The PL lifetime of QDs with the SRL is smaller than that of QDs without the SRL. The QDs with different densities have different PL lifetime dependence on the QDs size. These observations can be explained by the competition between the carrier redistribution and thermal emission.

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Temperature Dependence of Photoluminescence in Self-assembled Bimodal Quantum Dots

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Photoluminescence Comparation Of Inas Quantum Dots With Different Capping

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well

Temperature Dependent and Time-Resolved Photoluminescence Studies of Inas Self-Assembled Quantum Dots with Ingaas Strain Reducing Layer Structure

Temperature Dependence of Photoluminescence from Self-Organized Ge Quantum Dots with Large Size and Low Density