Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Seunghyun Lee,Riazul Arefin,Hyemin Jung,Jaedu Ha,Md Saiful Islam Sumon,Jong Su Kim,Sanjay Krishna,Shamsul Arafin
DOI: https://doi.org/10.1063/5.0071960
IF: 3.5
2022-06-21
Physics Today
Abstract:Journal of Applied Physics, Volume 131, Issue 23, June 2022. This experimental study reports the morphological and optical properties of self-organized quaternary InAlGaAs quantum dots (QDs) grown on GaAs substrates. Atomic force microscopy (AFM) revealed the presence of QDs and their geometry across the sample surface, while the optical properties were verified by photoluminescence (PL) spectroscopy. Temperature-dependent PL measurements were performed for a series of samples with different indium compositions. Unlike conventional quantum well materials, the change in PL peak positions in QD structures exhibits a non-monotonic exotic dependence on temperature. Our AFM data confirm a bimodal distribution of dot sizes as corroborated by calculated thermal activation energies. A rapid decrease in the PL signal at elevated temperatures suggests that thermionic emission and interface defects are the two dominant mechanisms of carrier escape and recombination in these QD structures. Such a quaternary QD-based active region is important for realizing next-generation diode lasers with an emission wavelength shorter than 1 μm.
physics, multidisciplinary
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