Numerical study of Valence Band states evolution in AlGaAs [111] QDs systems

M. Lazarev
2023-07-16
Abstract:Quantum Dots are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and Valence Band states character was numerically investigated from the effect of nanostructure geometry and composition. Numerical simulation was carried out using Luttinger Kohn model adapted to the particular use case of QDs in inverted pyramids. We present the source code of the 4 band Luttinger Kohn model that can be used to model AlGaAs or InGaAs nanostructures. Here we focus on the optical properties study of GaAs/AlGaAs [111] QDs and Quantum Dot Molecules (QDMs). We examine the dependence of Ground State (GS) optical properties on their structural parameters and predict optimal parameters of the QD and QDM systems to achieve the dynamic control of GS polarization by the applied electric field.
Mesoscale and Nanoscale Physics,Materials Science,Applied Physics,Quantum Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the evolution of valence band (VB) states in GaAs/AlGaAs [111] quantum dots (QDs) and quantum dot molecules (QDMs), especially how these states are affected by the nanostructure geometry and material composition. Specifically, the author explored the following aspects through numerical simulation: 1. **Evolution of valence - band states**: Study the influence of different geometries and material compositions on valence - band states, especially in the quantum dot system in an inverted pyramid structure. 2. **Dynamic control of light polarization characteristics**: By applying an external electric field, the dynamic control of the ground - state (GS) light polarization of quantum dots is achieved, thereby optimizing the optical performance of the quantum dot system. 3. **Coupling strength regulation**: Study the influence of the barrier height in quantum dot molecules on the coupling strength and how this influence changes the optical properties of the system. ### Main research content - **Theoretical model**: Use the 4 - band Luttinger - Kohn kp model to describe the optical properties of III - V semiconductor heterostructures and develop the corresponding source code. - **Numerical simulation**: Through numerical simulation, the evolution of the valence - band ground state of a single quantum dot and quantum dot molecules under different thicknesses and electric fields was studied, and how these changes affect their optical properties. - **Experimental verification**: Based on the existing experimental data, the validity of the model was verified, and the optimal dynamic control conditions that can be achieved by adjusting the structural parameters were predicted. ### Specific problems and solutions 1. **Conversion of valence - band ground state**: By changing the thickness of the quantum dot, the transition of the valence - band ground state from heavy hole (HH) to light hole (LH) was observed, and this transition occurs around a thickness of about 14 nm. 2. **Electric field control**: Applying an electric field along the growth direction can dynamically adjust the valence - band structure of the quantum dot, making the ground - state valence - band property change from HH to LH, or vice versa. This provides the possibility for the dynamic control of light polarization. 3. **Research on quantum dot molecules**: By adjusting the barrier height, the change of the coupling strength in quantum dot molecules and its influence on the optical properties were studied. It was found that QDMs are more sensitive to the external electric field and show a stronger polarization switching ability. ### Conclusion Through the above research, the author has proved that the valence - band states of quantum dots and quantum dot molecules are very sensitive to the environment, which makes them ideal candidates for polarization - controllable single - photon sources. At the same time, the research also shows how to achieve the dynamic control of optical characteristics by adjusting the external electric field and barrier height, which is of great significance for the construction of polarization - switching devices in the future.