Numerical Simulation of the Dynamic Response of Self-Assembled In0.4ga0.6as/Gaas Quantum Dot Lasers

HT Jiang,J Singh
DOI: https://doi.org/10.1117/12.319649
1998-01-01
Abstract:Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of similar to 10(-14) cm(2) and modulation bandwidths of 7-8 GHz have been demonstrated [1,2].The following observations suggest that the operation of self-assembled lasers will be different from conventional semiconductor lasers in important aspects: (i) the electronic states are discrete - like those in an atomic system; (ii) the separation of the ground and excited states in the quantum dot conduction band states is larger than the optical phonon energy suggesting that processes other than optical phonon interaction are responsible for carrier thermalization and modulation; (iii) the high strain in the system suggests that simple effective mass pictures will not be accurate in describing the system.In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model [3] and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results.Our results will focus on the following issues: (i) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e whether ground state or excited state lasing will occur); (ii) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.
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