Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Electric fields and valence band offsets at strained [111] heterojunctions

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

QUANTUM DOT OPTO-ELECTRONIC DEVICES

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots