Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

GaAs Quantum Dots under Quasi-Uniaxial Stress: Experiment and Theory

Conquer the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Influence of Strain on Built-in Dipole Moment in Asymmetric in X Ga1−x As Quantum Dot Molecules

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Eliminating the Fine Structure Splitting of Excitons in Self-Assembled InAs/GaAs Quantum Dots Via Combined Stresses

Strain Distribution and Electronic Structures of the InAs/GaAs Quantum Ring Molecule in an Applied Electric Field

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation