Abstract:Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of similar to 10(-14) cm(2) and modulation bandwidths of 7-8 GHz have been demonstrated [1,2].The following observations suggest that the operation of self-assembled lasers will be different from conventional semiconductor lasers in important aspects: (i) the electronic states are discrete - like those in an atomic system; (ii) the separation of the ground and excited states in the quantum dot conduction band states is larger than the optical phonon energy suggesting that processes other than optical phonon interaction are responsible for carrier thermalization and modulation; (iii) the high strain in the system suggests that simple effective mass pictures will not be accurate in describing the system.In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model [3] and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results.Our results will focus on the following issues: (i) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e whether ground state or excited state lasing will occur); (ii) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.

Microscopic Approach to Many-Exciton Complexes in Self-Assembled InGaAs/GaAs Quantum Dots

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Multiband Theory of Multi-Exciton Complexes in Self-Assembled Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

Eliminating the Fine Structure Splitting of Excitons in Self-Assembled InAs/GaAs Quantum Dots Via Combined Stresses

Numerical Simulation of the Dynamic Response of Self-Assembled In0.4ga0.6as/Gaas Quantum Dot Lasers

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Conquer the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

Exciton dynamics in self-organized InAs/GaAs quantum dots

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach