Abstract:We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the [110] and $[1\overline{1}0]$ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the [110] $([1\overline{1}0])$ direction enhances the negative (positive) piezoelectric potential in the coupling region and lowers (raises) the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding $s$ orbitals to the two coupled $p$ orbitals in quantum dots coupled along the $[1\overline{1}0]$ direction and increases the splitting in the quantum dots coupled along the [110] direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the [110] direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the $[1\overline{1}0]$ direction.

Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots

High Polarization Properties of Single-Photon Emission from Anisotropic InGaAs Quantum Dots

Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure

Optical Characterization of Structure for Semiconductor Quantum Dots

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Polarization of Intersubband Transitions in Self-Assembled Quantum Dots

Direct Observation of Excitonic Polaron in InAs/GaAs Quantum Dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

Polarization Dependence of Semiconductor Exciton and Biexciton Contributions to Phase-Resolved Optical Two-Dimensional Fourier-transform Spectra

Multiband Theory of Multi-Exciton Complexes in Self-Assembled Quantum Dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots