Abstract:We investigated the electronic and optical properties of self-assembled laterally double InAs/GaAs quantum dots coupled along the [110] and $[1\overline{1}0]$ directions with varying interdot distances. The coupling region provides a stronger confinement for both electrons and holes than in the center of each dot due to the weak compressive strain and positive biaxial strain in the region. The lateral coupling along the [110] $([1\overline{1}0])$ direction enhances the negative (positive) piezoelectric potential in the coupling region and lowers (raises) the potential in the middle of each dot. As a result, the piezoelectric potential decreases the splitting between the two transitions from the bonding $s$ orbitals to the two coupled $p$ orbitals in quantum dots coupled along the $[1\overline{1}0]$ direction and increases the splitting in the quantum dots coupled along the [110] direction. The direction of coupling is clearly distinguishable by the polarization of intraband transition since most transitions are polarized along the axis passing through the two dots. Lateral coupling enhances the polarization anisotropy of interband absorption spectra. In the presence of the piezoelectric potential, quantum dots coupled along the [110] direction exhibit larger redshift of the lowest exciton energies when the distance between the two dots is sufficiently close and have smaller exciton binding energies than quantum dots coupled along the $[1\overline{1}0]$ direction.

Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure

Optical Characterization of Structure for Semiconductor Quantum Dots

High Polarization Properties of Single-Photon Emission from Anisotropic InGaAs Quantum Dots

Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots

Polarization of Intersubband Transitions in Self-Assembled Quantum Dots

Origins Of Optical Anisotropy In Artificial Atoms

Internal And External Polarization Memory Loss In Single Semiconductor Quantum Dots

Creating Polarization-Entangled Photon Pairs from a Semiconductor Quantum Dot Using the Optical Stark Effect.

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Polarization dependent spontaneous-emission rate of single quantum dots in photonic crystal membranes

Spin Polarization in Self-Assembled Quantum Dots

Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots

Electric field effect on anisotropic nonlinear optical properties of GaN/AlN quantum dots with multitype-tunable shape

Spin Polarization In A Single Inas/Inp Quantum Dot

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Effects of anisotropy on the electronic structure and nonlinear optical rectification in a quantum dot with hydrogen molecular ion

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Enhanced Spin Polarization from Biaxially Strained Colloidal Quantum Dots