Abstract:We demonstrate the emission of polarization-entangled photons from a single semiconductor quantum dot in the telecom C-band (1530 nm–1565 nm). To reach this telecommunication window, the well-established material system of InAs quantum dots embedded in InGaAs barriers is utilized with an additional insertion of an InGaAs metamorphic buffer to spectrally shift the system to the desired wavelengths. For the observation of polarization-entangled photon pairs, the biexciton-exciton cascade of a quantum dot displaying an intrinsically low fine-structure splitting is investigated by means of polarization-dependent cross-correlation measurements. A complete set of tomography measurements enables us to reconstruct the two-photon density matrix and therefore to calculate a corresponding fidelity f+ to the maximally entangled Bell state Ψ+ of 0.61 ± 0.07, a concurrence of 0.74 ± 0.11, a tangle of 0.55 ± 0.14, and a negativity of 0.63 ± 0.12, clearly proving the entanglement of the states. Finally, the development of the concurrence is studied in dependency of the post-selected time-gate of the emission events and the progression of the time-delay dependent fidelity to distinct Bell states is displayed.

High Polarization Properties of Single-Photon Emission from Anisotropic InGaAs Quantum Dots

Internal And External Polarization Memory Loss In Single Semiconductor Quantum Dots

Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots

Creating Polarization-Entangled Photon Pairs from a Semiconductor Quantum Dot Using the Optical Stark Effect.

Internal and external polarization memory loss in single quantum dots

Polarization Properties of Quantum-Dot-Based Single Photon Sources

Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure

Optical Anisotropy in Inas Quantum Dots Formed on Gaas Pyramids

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Optical Characterization of Structure for Semiconductor Quantum Dots

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Controlling Polarization Anisotropy of Site-Controlled InAs/InP (100) Quantum Dots

Polarization dependent spontaneous-emission rate of single quantum dots in photonic crystal membranes

Polarization Dynamics of Solid-State Quantum Emitters

Direct Observation of Excitonic Polaron in InAs/GaAs Quantum Dots

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Polarization-Correlated Photon Pairs from a Single Quantum Dot

Dual-polarization light emission from InAs quantum dots in a annular photonic crystal cavity

Polarization-entangled photons from an InGaAs-based quantum dot emitting in the telecom C-band

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots