Controlling Polarization Anisotropy of Site-Controlled InAs/InP (100) Quantum Dots

Jiayue Yuan,Hao Wang,Rene P. J. van Veldhoven,Jia Wang,Tjibbe de Vries,Barry Smalbrugge,C. Y. Jin,Peter Nouwens,Erik Jan Geluk,Andrei Yu. Silov,Richard Notzel
DOI: https://doi.org/10.1063/1.3591155
IF: 4
2011-01-01
Applied Physics Letters
Abstract:We report on the shape and polarization control of site-controlled multiple and single InAs quantum dots (QDs) on InP pyramids grown by selective-area metal-organic vapor phase epitaxy. With increasing growth temperature the QDs elongate causing strong linear polarization of the photoluminescence. With reduced pyramid base/pyramid top area/QD number, the degree of polarization decreases, attributed to the symmetric pyramid top, reaching zero for single QDs grown at lower temperature. This control of linear polarization is important for entangled photon sources operating in the 1.55 μm wavelength region.
What problem does this paper attempt to address?