Abstract:We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 {\mu}m undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 {\mu}m in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Optical Properties of Quasi-Ordered 112̅2 AlGaN Multi-Quantum-well Nanorod Arrays

Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Energy Band Modulation of GaAs/Al0.26Ga0.74As Quantum Well in 3D Self-Assembled Nanomembranes

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings

Optical properties of quasi-ordered 11 2 ̅ 2 AlGaN multi-quantum-well nanorod arrays

Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography

A Piezomodulated Reflectance Study of InAs/GaAs Surface Quantum Dots

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

The Photoluminescence Properties of QWs with Asymmetrical Step-Like InGaN/GaN Quantum Barriers

Shaping InAs Quantum Dot Photoluminescence Using GaAs Nanoresonator Arrays

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well