Abstract:I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. For the InAs/GaAs system we present single-dot photoluminescence spectra for different excitation power densities and temperatures. These spectra show level splitting due to few-particle effects. We also present calculations including both direct and exchange interaction for systems up to three excitons in the dot. We were able to assign different emission lines to transitions between different multiple exciton states. A rate equation model was developed which allows simulations of the peak intensities with excitation power density to be made and compared with experimental results. The InAs/InP system was investigated using PL spectroscopy, JSCT, and PC measurements. In contrast to other systems the holes were found to be more strongly confined than the electrons. We have also performed photoluminescence measurements revealing excited states in good agreement with theory. For both systems we studied the possibility to manipulate the positioning and size of the QDs. The growth results were investigated using atomic force microscopy (AFM) and PL measurements (Less)

A Piezomodulated Reflectance Study of InAs/GaAs Surface Quantum Dots

Multiple Confined‐state Transitions Within Surface Quantum Dots by a Piezomodulation Reflectance Study

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Raman scattering of InAs quantum dots on GaAs/InP

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Selectively in situ probing of self-assembled InGaAs quantum dots in a planar GaAs microcavity by angle-resolved detection of Photoluminescence spectrum

Direct Observation of Single InAs/GaAs Quantum Dot Spectrum Without Mesa or Mask

Optical Studies of InAs Quantum Dots in III-V Semiconductors

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Interband Transition Distributions in the Optical Spectra of Inas/Gaas Self-Assembled Quantum Dots

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Characteristics of InAs Quantum Dots on GaAs/InP with Different InAs Coverage