Multiple Confined‐state Transitions Within Surface Quantum Dots by a Piezomodulation Reflectance Study

C. H. Yu,C. Wang,B. Zhang,Q. Gong,Y. J. Li,W. Lu,S. C. Shen
DOI: https://doi.org/10.1002/pssa.200622367
2007-01-01
Abstract:Multiple confined-state transitions within surface quantum dots deposited on In0.35Ga0.65As template grown on GaAs (311)B substrate, as well as signals from all other relevant portions of the samples including buried QDs, In0.35Ga0.65As template, and GaAs-related layers, at 77 K, were obtained in a piezomodulation reflectance spectroscopy (PzR) study. The measured transition energies were accurately determined using a Gaussian lineshape fit based on the reference of PL results. Four factors caused the large energy shift (larger than 400 meV) of confined states within SQDs compared to the buried QDs. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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