Abstract:InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 mu m were self-assembled on InP substrate by using metal-organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the growth conditions, i.e. substrate temperature and the growth rate, on the InAsSb QD formations have been studied. A narrow temperature window from 450 degrees C to 470 degrees C was found for growing high quality InAsSb QDs. InAsSb rings instead of islands/dots were formed using the conventional Stranski-Krastanow (S-K) growth mode if the growth rate was low or if InAsSb was grown for a longer time. By increasing the V : III ratio for the InAsSb growth, InAsSb islands/dots were formed with the same growth rate. To reduce the dot size and increase the InAsSb QD density, an alternative interruption growth (AIG) method was proposed and investigated. Using the AIG growth method, much higher dot density of the InAsSb QDs has been achieved, about 3 x 10(9) cm(-2), which is about 10 times of that of the QDs grown by using the conventional S-K growth method. Strong photoluminescence emissions of the InAsSb islands/dots were observed. At room temperature, the emission wavelength of the InAsSb islands/dots was measured at >2.8 mu m.

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band

Optical And Local Current Studies On Inas/Gaas Quantum Dots

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Mid-infrared emissive InAsSb quantum dots grown by metal-organic chemical vapor deposition

Si Delta Doping Inside InAs/GaAs Quantum Dots with Different Doping Densities

Growth and Photoluminescence of InxGa1−xAs Quantum Dots on the Surface of GaAs Nanowires by Metal Organic Chemical Vapor Deposition

PL of low-density InAs/GaAs quantum dots with different bimodal populations

InAs/GaAs Quantum Dots with Wide-Range Tunable Densities by Simply Varying V/III Ratio Using Metal-Organic Chemical Vapor Deposition

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

1.3 Μm InAs/GaAs Quantum Dots with Broad Emission Spectra

Metal-organic chemical vapor deposition of GaSb/GaAs quantum dots: the dependence of the morphology on growth temperature and vapour V/III ratio

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

Extremely Low Density Inas Quantum Dots with No Wetting Layer

Ultrahigh-density Self-Assembled Quantum Dots of InGaAs and Suppression of Optical State-Filling Effect